2010, Radziunas, Mindaugas, Vladimirov, A.G., Viktorov, E.A.

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

2010, Radziunas, Mindaugas, Vladimirov, Andrei G., Viktorov, Evgeny A., Fiol, Gerrit, Schmeckebier, Holger, Birnmberg, Dieter

We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by experimental data.