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    Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, A.G.; Viktorov, E.A.
    We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.
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    Strong asymmetry of mode-locking pulses in quantum-dot semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, Andrei G.; Viktorov, Evgeny A.; Fiol, Gerrit; Schmeckebier, Holger; Birnmberg, Dieter
    We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by experimental data.