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Author: Schmidt, O.G. × End date: 2019 × Start date: 2010 × DDC: 620 × Publisher: New York, NY [u.a.] : Springer × WGL Institute: IFWD ×

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    Rolled-up tubes and cantilevers by releasing SrRuO 3-Pr 0.7Ca 0.3MnO 3 nanomembranes
    (New York, NY [u.a.] : Springer, 2011) Deneke, C.; Wild, E.; Boldyreva, K.; Baunack, S.; Cendula, P.; Mönch, I.; Simon, M.; Malachias, A.; Dörr, K.; Schmidt, O.G.
    Three-dimensional micro-objects are fabricated by the controlled release of inherently strained SrRuO 3/Pr 0.7Ca 0.3MnO 3/SrRuO 3 nanometer-sized trilayers from SrTiO 3 (001) substrates. Freestanding cantilevers and rolled-up microtubes with a diameter of 6 to 8 μm are demonstrated. The etching behavior of the SrRuO3 film is investigated, and a selectivity of 1:9,100 with respect to the SrTiO3 substrate is found. The initial and final strain states of the rolled-up oxide layers are studied by X-ray diffraction on an ensemble of tubes. Relaxation of the sandwiched Pr0.7Ca0.3MnO3 layer towards its bulk lattice parameter is observed as the major driving force for the roll-up of the trilayers. Finally, μ-diffraction experiments reveal that a single object can represent the ensemble proving a good homogeneity of the rolled-up tubes.
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    Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
    (New York, NY [u.a.] : Springer, 2011) Harazim, S.M.; Feng, P.; Sanchez, S.; Deneke, C.; Mei, Y.; Schmidt, O.G.
    Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.