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- ItemSlow and fast single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line(London : Nature Publishing Group, 2019) Kroh, T.; Wolters, J.; Ahlrichs, A.; Schell, A.W.; Thoma, A.; Reitzenstein, S.; Wildmann, J.S.; Zallo, E.; Trotta, R.; Rastelli, A.; Schmidt, O.G.; Benson, O.Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single-photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D1 transition. The delay of spectral components of the single-photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, “slow light” and “fast light” behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network.
- ItemFree-standing Fe2O3 nanomembranes enabling ultra-long cycling life and high rate capability for Li-ion batteries(London : Nature Publishing Group, 2014) Liu, X.; Si, W.; Zhang, J.; Sun, X.; Deng, J.; Baunack, S.; Oswald, S.; Liu, L.; Yan, C.; Schmidt, O.G.With Fe2O3 as a proof-of-concept, free-standing nanomembrane structure is demonstrated to be highly advantageous to improve the performance of Li-ion batteries. The Fe2O3 nanomembrane electrodes exhibit ultra-long cycling life at high current rates with satisfactory capacity (808 mAh g-1 after 1000 cycles at 2 C and 530 mAh g-1 after 3000 cycles at 6 C) as well as repeatable high rate capability up to 50 C. The excellent performance benefits particularly from the unique structural advantages of the nanomembranes. The mechanical feature can buffer the strain of lithiation/delithiation to postpone the pulverization. The two-dimensional transport pathways in between the nanomembranes can promote the pseudo-capacitive type storage. The parallel-laid nanomembranes, which are coated by polymeric gel-like film and SEI layer with the electrolyte in between layers, electrochemically behave like numerous "mini-capacitors" to provide the pseudo-capacitance thus maintain the capacity at high rate.
- ItemCoupling a single solid-state quantum emitter to an array of resonant plasmonic antennas(London : Nature Publishing Group, 2018) Pfeiffer, M.; Atkinson, P.; Rastelli, A.; Schmidt, O.G.; Giessen, H.; Lippitz, M.; Lindfors, K.Plasmon resonant arrays or meta-surfaces shape both the incoming optical field and the local density of states for emission processes. They provide large regions of enhanced emission from emitters and greater design flexibility than single nanoantennas. This makes them of great interest for engineering optical absorption and emission. Here we study the coupling of a single quantum emitter, a self-assembled semiconductor quantum dot, to a plasmonic meta-surface. We investigate the influence of the spectral properties of the nanoantennas and the position of the emitter in the unit cell of the structure. We observe a resonant enhancement due to emitter-array coupling in the far-field regime and find a clear difference from the interaction of an emitter with a single antenna.
- ItemKey concepts behind forming-free resistive switching incorporated with rectifying transport properties(London : Nature Publishing Group, 2013) Shuai, Y.; Ou, X.; Luo, W.; Mücklich, A.; Bürger, D.; Zhou, S.; Wu, C.; Chen, Y.; Zhang, W.; Helm, M.; Mikolajick, T.; Schmidt, O.G.; Schmidt, H.This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO 3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO 3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO 2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600 C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO 3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO 3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.
- ItemIncreased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons(London : Nature Publishing Group, 2020) Vegesna, S.V.; Bhat, V.J.; Bürger, D.; Dellith, J.; Skorupa, I.; Schmidt, O.G.; Schmidt, H.A novel small signal equivalent circuit model is proposed in the inversion regime of metal/(ZnO, ZnMnO, and ZnCoO) semiconductor/Si3N4 insulator/p-Si semiconductor (MSIS) structures to describe the distinctive nonlinear frequency dependent capacitance (C-F) and conductance (G-F) behaviour in the frequency range from 50 Hz to 1 MHz. We modelled the fully depleted ZnO thin films to extract the static dielectric constant (εr) of ZnO, ZnMnO, and ZnCoO. The extracted enhancement of static dielectric constant in magnetic n-type conducting ZnCoO (εr ≥ 13.0) and ZnMnO (εr ≥ 25.8) in comparison to unmagnetic ZnO (εr = 8.3–9.3) is related to the electrical polarizability of donor-type bound magnetic polarons (BMP) in the several hundred GHz range (120 GHz for CdMnTe). The formation of donor-BMP is enabled in n-type conducting, magnetic ZnO by the s-d exchange interaction between the electron spin of positively charged oxygen vacancies Vo+ in the BMP center and the electron spins of substitutional Mn2+ and Co2+ ions in ZnMnO and ZnCoO, respectively. The BMP radius scales with the Bohr radius which is proportional to the static dielectric constant. Here we show how BMP overlap can be realized in magnetic n-ZnO by increasing its static dielectric constant and guide researchers in the field of transparent spintronics towards ferromagnetism in magnetic, n-ZnO.
- ItemSolid-state ensemble of highly entangled photon sources at rubidium atomic transitions(London : Nature Publishing Group, 2017) Keil, R.; Zopf, M.; Chen, Y.; Höfer, B.; Zhang, J.; Ding, F.; Schmidt, O.G.Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization-entangled photon pairs. Despite remarkable progress in the past 20 years, many challenges still remain for this material, such as the extremely low yield, the low degree of entanglement and the large wavelength distribution. Here, we show that with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement and ultra-narrow wavelength distribution at rubidium transitions. Therefore, this material system is an attractive candidate for the realization of a solid-state quantum repeater - among many other key enabling quantum photonic elements.
- ItemUniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics(London : Nature Publishing Group, 2018) Yuan, X.; Weyhausen-Brinkmann, F.; Martín-Sánchez, J.; Piredda, G.; Křápek, V.; Huo, Y.; Huang, H.; Schimpf, C.; Schmidt, O.G.; Edlinger, J.; Bester, G.; Trotta, R.; Rastelli, A.The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in-plane uniaxial stress. By using piezoelectric strain-actuators featuring strain amplification, we study the evolution of the selection rules and excitonic fine structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry-properties of the system. The experimental and computational results suggest that uniaxial stress may be the right tool to obtain quantum-light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.
- ItemHighly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots(London : Nature Publishing Group, 2017) Huber, D.; Reindl, M.; Huo, Y.; Huang, H.; Wildmann, J.S.; Schmidt, O.G.; Rastelli, A.; Trotta, R.The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.
- ItemSpin-orbit coupling of light in asymmetric microcavities(London : Nature Publishing Group, 2016) Ma, L.B.; Li, S.L.; Fomin, V.M.; Hentschel, M.; Götte, J.B.; Yin, Y.; Jorgensen, M.R.; Schmidt, O.G.When spinning particles, such as electrons and photons, undergo spin–orbit coupling, they can acquire an extra phase in addition to the well-known dynamical phase. This extra phase is called the geometric phase (also known as the Berry phase), which plays an important role in a startling variety of physical contexts such as in photonics, condensed matter, high-energy and space physics. The geometric phase was originally discussed for a cyclically evolving physical system with an Abelian evolution, and was later generalized to non-cyclic and non-Abelian cases, which are the most interesting fundamental subjects in this area and indicate promising applications in various fields. Here, we enable optical spin–orbit coupling in asymmetric microcavities and experimentally observe a non-cyclic optical geometric phase acquired in a non-Abelian evolution. Our work is relevant to fundamental studies and implies promising applications by manipulating photons in on-chip quantum devices.
- ItemMagnetic origami creates high performance micro devices(London : Nature Publishing Group, 2019) Gabler, F.; Karnaushenko, D.D.; Karnaushenko, D.; Schmidt, O.G.Self-assembly of two-dimensional patterned nanomembranes into three-dimensional micro-architectures has been considered a powerful approach for parallel and scalable manufacturing of the next generation of micro-electronic devices. However, the formation pathway towards the final geometry into which two-dimensional nanomembranes can transform depends on many available degrees of freedom and is plagued by structural inaccuracies. Especially for high-aspect-ratio nanomembranes, the potential energy landscape gives way to a manifold of complex pathways towards misassembly. Therefore, the self-assembly yield and device quality remain low and cannot compete with state-of-the art technologies. Here we present an alternative approach for the assembly of high-aspect-ratio nanomembranes into microelectronic devices with unprecedented control by remotely programming their assembly behavior under the influence of external magnetic fields. This form of magnetic Origami creates micro energy storage devices with excellent performance and high yield unleashing the full potential of magnetic field assisted assembly for on-chip manufacturing processes.