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- ItemCoherent control of the photoinduced transition in a strongly correlated material(College Park, MD : APS, 2022) Molinero, Eduardo B.; Silva, Rui E. F.The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the material into an insulating phase. When shining a Mott insulator with a strong laser pulse, the electric field may induce the creation of doublon-hole pairs, triggering a photoinduced transition into a metallic state. In this paper, we take advantage of the threshold character of this photoinduced transition and we propose a setup that consists of a midinfrared laser pulse and a train of short pulses separated by a half period of the midinfrared with alternating phases. By varying the time delay between the two pulses and the internal carrier envelope phase of the short pulses, we achieve control of the phase transition, which leaves its fingerprint at its high harmonic spectrum.
- ItemSub-cycle valleytronics: control of valley polarization using few-cycle linearly polarized pulses(Washington, DC : OSA, 2021) Jiménez-Galán, Álvaro; Silva, Rui E. F.; Smirnova, Olga; Ivanov, MishaSo far, it has been assumed that selective excitation of a desired valley in the Brillouin zone of a hexagonal two-dimensional material has to rely on using circularly polarized fields. We theoretically demonstrate a way to control the valley excitation in hexagonal 2D materials on a few-femtosecond timescale using a few-cycle, linearly polarized pulse with controlled carrier–envelope phase. The valley polarization is mapped onto the strength of the perpendicular harmonic signal of a weak, linearly polarized pulse, which allows to read this information all-optically without destroying the valley state and without relying on the Berry curvature, making our approach potentially applicable to inversion-symmetric materials. We show applicability of this method to hexagonal boron nitride and MoS2.