2013, Mogilatenko, A., Kirmse, H., Hagedorn, S., Richter, E., Zeimer, U., Weyers, M., Tränkle, G.

a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)N

2012, Tränkle, G., Erbert, G., Wicht, A., Luvsandamdin, E.

[no abstract available]

2018, Nguyen, T.-P., Wenzel, H., Brox, O., Bugge, F., Ressel, P., Schiemangk, M., Wicht, A., Tien, T.Q., Tränkle, G.

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

2012, Tränkle, G., Erbert, G., Wicht, A., Spiessberger, S.

[no abstract available]