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- ItemCurrent Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode(Basel : MDPI, 2018) Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, ChristianGraphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μS was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.
- ItemControl of etch pit formation for epitaxial growth of graphene on germanium(Melville, NY : American Inst. of Physics, 2019) Becker, Andreas; Wenger, Christian; Dabrowski, JarekGraphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).
- ItemGraphene Schottky Junction on Pillar Patterned Silicon Substrate(Basel : MDPI, 2019) Luongo, Giuseppe; Grillo, Alessandro; Giubileo, Filippo; Iemmo, Laura; Lukosius, Mindaugas; Chavarin, Carlos Alvarado; Wenger, Christian; Di Bartolomeo, AntonioA graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly biasand temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector. © 2019 by the authors.