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- ItemAnnual variability of ice-nucleating particle concentrations at different Arctic locations(Göttingen : Copernicus GmbH, 2019) Wex, H.; Huang, L.; Zhang, W.; Hung, H.; Traversi, R.; Becagli, S.; Sheesley, R.J.; Moffett, C.E.; Barrett, T.E.; Bossi, R.; Skov, H.; Hünerbein, A.; Lubitz, J.; Löffler, M.; Linke, O.; Hartmann, M.; Herenz, P.; Stratmann, F.Number concentrations of ice-nucleating particles (NINP) in the Arctic were derived from ground-based filter samples. Examined samples had been collected in Alert (Nunavut, northern Canadian archipelago on Ellesmere Island), Utqiagvik, formerly known as Barrow (Alaska), Nyalesund (Svalbard), and at the Villum Research Station (VRS; northern Greenland). For the former two stations, examined filters span a full yearly cycle. For VRS, 10 weekly samples, mostly from different months of one year, were included. Samples from Ny-Alesund were collected during the months from March until September of one year. At all four stations, highest concentrations were found in the summer months from roughly June to September. For those stations with sufficient data coverage, an annual cycle can be seen. The spectra of NINP observed at the highest temperatures, i.e., those obtained for summer months, showed the presence of INPs that nucleate ice up to-5 °C. Although the nature of these highly ice-active INPs could not be determined in this study, it often has been described in the literature that ice activity observed at such high temperatures originates from the presence of ice-active material of biogenic origin. Spectra observed at the lowest temperatures, i.e., those derived for winter months, were on the lower end of the respective values from the literature on Arctic INPs or INPs from midlatitude continental sites, to which a comparison is presented herein. An analysis concerning the origin of INPs that were ice active at high temperatures was carried out using back trajectories and satellite information. Both terrestrial locations in the Arctic and the adjacent sea were found to be possible source areas for highly active INPs.
- ItemDigital IIR filters design using differential evolution algorithm with a controllable probabilistic population size(San Francisco, CA : Public Library of Science (PLoS), 2012) Zhu, W.; Fang, J.-A.; Tang, Y.; Zhang, W.; Du, W.Design of a digital infinite-impulse-response (IIR) filter is the process of synthesizing and implementing a recursive filter network so that a set of prescribed excitations results a set of desired responses. However, the error surface of IIR filters is usually non-linear and multi-modal. In order to find the global minimum indeed, an improved differential evolution (DE) is proposed for digital IIR filter design in this paper. The suggested algorithm is a kind of DE variants with a controllable probabilistic (CPDE) population size. It considers the convergence speed and the computational cost simultaneously by nonperiodic partial increasing or declining individuals according to fitness diversities. In addition, we discuss as well some important aspects for IIR filter design, such as the cost function value, the influence of (noise) perturbations, the convergence rate and successful percentage, the parameter measurement, etc. As to the simulation result, it shows that the presented algorithm is viable and comparable. Compared with six existing State-of-the-Art algorithms-based digital IIR filter design methods obtained by numerical experiments, CPDE is relatively more promising and competitive.
- ItemKey concepts behind forming-free resistive switching incorporated with rectifying transport properties(London : Nature Publishing Group, 2013) Shuai, Y.; Ou, X.; Luo, W.; Mücklich, A.; Bürger, D.; Zhou, S.; Wu, C.; Chen, Y.; Zhang, W.; Helm, M.; Mikolajick, T.; Schmidt, O.G.; Schmidt, H.This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO 3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO 3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO 2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600 C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO 3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO 3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.