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Author: Zhou, S. ×

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    Adaptive elimination of synchronization in coupled oscillator
    (Bristol : Institute of Physics Publishing, 2017) Zhou, S.; Ji, P.; Zhou, Q.; Feng, J.; Kurths, J.; Lin, W.
    We present here an adaptive control scheme with a feedback delay to achieve elimination of synchronization in a large population of coupled and synchronized oscillators. We validate the feasibility of this scheme not only in the coupled Kuramoto's oscillators with a unimodal or bimodal distribution of natural frequency, but also in two representative models of neuronal networks, namely, the FitzHugh-Nagumo spiking oscillators and the Hindmarsh-Rose bursting oscillators. More significantly, we analytically illustrate the feasibility of the proposed scheme with a feedback delay and reveal how the exact topological form of the bimodal natural frequency distribution influences the scheme performance. We anticipate that our developed scheme will deepen the understanding and refinement of those controllers, e.g. techniques of deep brain stimulation, which have been implemented in remedying some synchronization-induced mental disorders including Parkinson disease and epilepsy.
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    Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
    (London : Nature Publishing Group, 2013) Shuai, Y.; Ou, X.; Luo, W.; Mücklich, A.; Bürger, D.; Zhou, S.; Wu, C.; Chen, Y.; Zhang, W.; Helm, M.; Mikolajick, T.; Schmidt, O.G.; Schmidt, H.
    This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO 3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO 3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO 2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600 C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO 3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO 3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.