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Now showing 1 - 10 of 57
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    Multilevel HfO2-based RRAM devices for low-power neuromorphic networks
    (Melville, NY : AIP Publ., 2019) Milo, V.; Zambelli, C.; Olivo, P.
    Training and recognition with neural networks generally require high throughput, high energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at the edge, i.e., in battery-powered portable devices and other limited-energy environments. In this scenario, scalable resistive memories have been proposed as artificial synapses thanks to their scalability, reconfigurability, and high-energy efficiency, and thanks to the ability to perform analog computation by physical laws in hardware. In this work, we study the material, device, and architecture aspects of resistive switching memory (RRAM) devices for implementing a 2-layer neural network for pattern recognition. First, various RRAM processes are screened in view of the device window, analog storage, and reliability. Then, synaptic weights are stored with 5-level precision in a 4 kbit array of RRAM devices to classify the Modified National Institute of Standards and Technology (MNIST) dataset. Finally, classification performance of a 2-layer neural network is tested before and after an annealing experiment by using experimental values of conductance stored into the array, and a simulation-based analysis of inference accuracy for arrays of increasing size is presented. Our work supports material-based development of RRAM synapses for novel neural networks with high accuracy and low-power consumption. © 2019 Author(s).
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    Novel concept for VCSEL enhanced silicon photonic coherent transceiver
    (New York, NY : American Inst. of Physics, 2019) Seiler, Pascal M.; Ronniger, Gregor; Troppenz, Ute; Sigmund, Ariane; Moehrle, Martin; Peczek, Anna; Zimmermann, Lars
    We present a novel concept for an integrated silicon photonic coherent transceiver using vertical-emitting laser sources at 1550 nm. In a state of the art external modulation configuration, we deploy a VCSEL on the transmit and a HCSEL on the receive side. We demonstrate the feasibility of this approach by externally modulating the VCSEL with QPSK at up to 28 Gbaud. We also perform experiments with the VCSEL-HCSEL configuration in a slave-master optical injection locking setup for future data center interconnects. The results show stable locking conditions and the VCSEL is detuned to perform predominant phase modulation. To the best of our knowledge, this is the first time direct phase modulation of a VCSEL under optical injection locking was demonstrated using two vertically emitting laser sources as master - and slave laser. © 2019 Author(s).
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    Towards CMOS integrated microfluidics using dielectrophoretic immobilization
    (Basel : MDPI, 2019) Ettehad, Honeyeh Matbaechi; Yadav, Rahul Kumar; Guha, Subhajit; Wenger, Christian
    Dielectrophoresis (DEP) is a nondestructive and noninvasive method which is favorable for point-of-care medical diagnostic tests. This technique exhibits prominent relevance in a wide range of medical applications wherein the miniaturized platform for manipulation (immobilization, separation or rotation), and detection of biological particles (cells or molecules) can be conducted. DEP can be performed using advanced planar technologies, such as complementary metal-oxide-semiconductor (CMOS) through interdigitated capacitive biosensors. The dielectrophoretically immobilization of micron and submicron size particles using interdigitated electrode (IDE) arrays is studied by finite element simulations. The CMOS compatible IDEs have been placed into the silicon microfluidic channel. A rigorous study of the DEP force actuation, the IDE’s geometrical structure, and the fluid dynamics are crucial for enabling the complete platform for CMOS integrated microfluidics and detection of micron and submicron-sized particle ranges. The design of the IDEs is performed by robust finite element analyses to avoid time-consuming and costly fabrication processes. To analyze the preliminary microfluidic test vehicle, simulations were first performed with non-biological particles. To produce DEP force, an AC field in the range of 1 to 5 V (peak-to-peak) is applied to the IDE. The impact of the effective external and internal properties, such as actuating DEP frequency and voltage, fluid flow velocity, and IDE’s geometrical parameters are investigated. The IDE based system will be used to immobilize and sense particles simultaneously while flowing through the microfluidic channel. The sensed particles will be detected using the capacitive sensing feature of the biosensor. The sensing and detecting of the particles are not in the scope of this paper and will be described in details elsewhere. However, to provide a complete overview of this system, the working principles of the sensor, the readout detection circuit, and the integration process of the silicon microfluidic channel are briefly discussed. © 2019 by the authors.
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    A Review on Passive and Integrated Near-Field Microwave Biosensors
    (Basel : MDPI, 2017) Guha, Subhajit; Jamal, Farabi Ibne; Wenger, Christian
    In this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper. Passive microwave biosensors are microwave structures, which are fabricated on a substrate and are used for sensing biological materials. On the other hand, integrated biosensors are microwave structures fabricated in standard semiconductor technology platform (CMOS or BiCMOS). The CMOS or BiCMOS sensor technology offers a more compact sensing approach which has the potential in the future for point of care testing systems. Various applications of the passive and the integrated sensors have been discussed in this review paper.
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    Design and Fabrication of a BiCMOS Dielectric Sensor for Viscosity Measurements: A Possible Solution for Early Detection of COPD
    (Basel : MDPI, 2018) Soltani Zarrin, Pouya; Jamal, Farabi Ibne; Guha, Subhajit; Wessel, Jan; Kissinger, Dietmar; Wenger, Christian
    The viscosity variation of sputum is a common symptom of the progression of Chronic Obstructive Pulmonary Disease (COPD). Since the hydration of the sputum defines its viscosity level, dielectric sensors could be used for the characterization of sputum samples collected from patients for early diagnosis of COPD. In this work, a CMOS-based dielectric sensor for the real-time monitoring of sputum viscosity was designed and fabricated. A proper packaging for the ESD-protection and short-circuit prevention of the sensor was developed. The performance evaluation results show that the radio frequency sensor is capable of measuring dielectric constant of biofluids with an accuracy of 4.17%. Integration of this sensor into a portable system will result in a hand-held device capable of measuring viscosity of sputum samples of COPD-patients for diagnostic purposes.
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    A survey on Bluetooth multi-hop networks
    (Amsterdam [u.a.] : Elsevier Science, 2019) Todtenberg, Nicole; Kraemer, Rolf
    Bluetooth was firstly announced in 1998. Originally designed as cable replacement connecting devices in a point-to-point fashion its high penetration arouses interest in its ad-hoc networking potential. This ad-hoc networking potential of Bluetooth is advertised for years - but until recently no actual products were available and less than a handful of real Bluetooth multi-hop network deployments were reported. The turnaround was triggered by the release of the Bluetooth Low Energy Mesh Profile which is unquestionable a great achievement but not well suited for all use cases of multi-hop networks. This paper surveys the tremendous work done on Bluetooth multi-hop networks during the last 20 years. All aspects are discussed with demands for a real world Bluetooth multi-hop operation in mind. Relationships and side effects of different topics for a real world implementation are explained. This unique focus distinguishes this survey from existing ones. Furthermore, to the best of the authors’ knowledge this is the first survey consolidating the work on Bluetooth multi-hop networks for classic Bluetooth technology as well as for Bluetooth Low Energy. Another individual characteristic of this survey is a synopsis of real world Bluetooth multi-hop network deployment efforts. In fact, there are only four reports of a successful establishment of a Bluetooth multi-hop network with more than 30 nodes and only one of them was integrated in a real world application - namely a photovoltaic power plant. © 2019 The Authors
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    High-temperature high-sensitivity AlN-on-SOI Lamb wave resonant strain sensor
    (New York, NY : American Inst. of Physics, 2018) Dou, Shaoxu; Qi, Mengke; Chen, Cong; Zhou, Hong; Wang, Yong; Shang, Zhengguo; Yang, Jing; Wang, Dengpan; Mu, Xiaojing
    A piezoelectric AlN-on-SOI structured MEMS Lamb wave resonator (LWR) is presented for high-temperature strain measurement. The LWR has a composite membrane of a 1 μm thick AlN film and a 30 μm thick device silicon layer. The excited acoustic waves include Rayleigh wave and Lamb waves. A tensile strain sensor has been prepared with one LWR mounted on a uniaxial tensile plate, and its temperature characteristics from 15.4°C to 250°C and tensile strain behaviors from 0 μϵ to 400 μϵ of Rayleigh wave and S4 mode Lamb wave were tested. The temperature test verifies the adaptability of the tensile strain sensor to temperature up to 250°C, and S4 mode Lamb wave and Rayleigh wave represent almost the same temperature characteristics. The strain test demonstrates that S4 mode Lamb wave shows much higher strain sensitivity (-0.48 ppm/μϵ) than Rayleigh wave (0.05 ppm/μϵ) and confirms its advantage of strain sensitivity. Finally, for this one-LWR strain sensor, a method of beat frequency between S4 mode Lamb wave and Rayleigh wave is proposed for temperature compensation and high-sensitivity strain readout.
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    Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz
    (New York, NY : American Inst. of Physics, 2019) Schmalz, K.; Rothbart, N.; Eissa, M.H.; Borngräber, J.; Kissinger, D.; Hübers, H.-W.
    This paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying for the transmitter. The signal-to-noise ratio (SNR) for the absorption line of gaseous methanol (CH 3 OH) at 247.6 GHz is used as measure for the performance of the system. The implemented mixer-first receiver allows a high performance of the system due to its linearity up to an input power of -10 dBm. Using a transmitter-array with an output power of 7 dBm an SNR of 4660 (integration time of 2 ms for each data point) was obtained for the 247.6 GHz absorption line of CH 3 OH at 5 Pa. We have extended our single frequency-band system for 228 - 252 GHz to a 2-band system to cover the range 222 - 270 GHz by combining corresponding two transmitters and receivers with the frequency bands 222 - 256 GHz and 250 - 270 GHz on single transmitter- and receiver-chips. This 2-band operation allows a parallel spectra acquisition and therefore a high flexibility of data acquisition for the two frequency-bands. The 50 GHz bandwidth allows for highly specific and selective gas sensing. © 2019 Author(s).
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    Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
    (Weinheim : Wiley-VCH, 2018) von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan
    Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.
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    Interpolation algorithm for asynchronous ADC-data
    (Göttingen : Copernicus Publications, 2017) Bramburger, Stefan; Zinke, Benny; Killat, Dirk
    This paper presents a modified interpolation algorithm for signals with variable data rate from asynchronous ADCs. The Adaptive weights Conjugate gradient Toeplitz matrix (ACT) algorithm is extended to operate with a continuous data stream. An additional preprocessing of data with constant and linear sections and a weighted overlap of step-by-step into spectral domain transformed signals improve the reconstruction of the asycnhronous ADC signal. The interpolation method can be used if asynchronous ADC data is fed into synchronous digital signal processing.