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- ItemAdvances in group-III-nitride photodetectors(Sharjah [u.a.] : Bentham Open, 2010) Rivera, C.; Pereiro, J.; Navarro, A.; Muñoz, E.; Brandt, O.; Grahn, H.T.Group-III nitrides are considered to be a strategic technology for the development of ultraviolet photodetectors due to their remarkable properties in terms of spectral selectivity, radiation hardness, and noise. The potential advantages of these materials were initially obscured by their large density of intrinsic defects. The advances were thus associated in general with improvements in material quality. Although technology still also needs improvement, efforts are being intensified in the fabrication of advanced structures for photodetector applications. In particular, this review discusses the recent progress in group-III-nitride photodetectors, emphasizing the work reported on quantum-well-based photodetectors, the use of novel structures exploiting the effect of piezoelectric polarization-induced fields, and polarization-sensitive photodetectors. Furthermore, some ideas can be generalized to other material systems such as ZnO and their related compounds, which exhibit the same crystal structure as group-III nitrides. © Rivera et al.; Licensee Bentham Open.
- ItemLayered manganese bismuth tellurides with GeBi4Te7- and GeBi6Te10-type structures: Towards multifunctional materials(London : RSC Publ., 2019) Souchay, Daniel; Nentwig, Markus; Günther, Daniel; Keilholz, Simon; de Boor, Johannes; Zeugner, Alexander; Isaeva, Anna; Ruck, Michael; Wolter, Anja U.B.; Büchnerde, Bernd; Oeckler, OliverThe crystal structures of new layered manganese bismuth tellurides with the compositions Mn0.85(3)Bi4.10(2)Te7 and Mn0.73(4)Bi6.18(2)Te10 were determined by single-crystal X-ray diffraction, including the use of microfocused synchrotron radiation. These analyses reveal that the layered structures deviate from the idealized stoichiometry of the 12P-GeBi4Te7 (space group P3m1) and 51R-GeBi6Te10 (space group R3m) structure types they adopt. Modified compositions Mn1-xBi4+2x/3Te7 (x = 0.15-0.2) and Mn1-xBi6+2x/3Te10 (x = 0.19-0.26) assume cation vacancies and lead to homogenous bulk samples as confirmed by Rietveld refinements. Electron diffraction patterns exhibit no diffuse streaks that would indicate stacking disorder. The alternating quintuple-layer [M2Te3] and septuple-layer [M3Te4] slabs (M = mixed occupied by Bi and Mn) with 1 : 1 sequence (12P stacking) in Mn0.85Bi4.10Te7 and 2 : 1 sequence (51R stacking) in Mn0.81Bi6.13Te10 were also observed in HRTEM images. Temperature-dependent powder diffraction and differential scanning calorimetry show that the compounds are high-temperature phases, which are metastable at ambient temperature. Magnetization measurements are in accordance with a MnII oxidation state and point at predominantly ferromagnetic coupling in both compounds. The thermoelectric figures of merit of n-type conducting Mn0.85Bi4.10Te7 and Mn0.81Bi6.13Te10 reach zT = 0.25 at 375 °C and zT = 0.28 at 325 °C, respectively. Although the compounds are metastable, compact ingots exhibit still up to 80% of the main phases after thermoelectric measurements up to 400 °C. © The Royal Society of Chemistry 2019.
- ItemElectrical and magnetic properties of NiTiO3 nanoparticles synthesized by the sol-gel synthesis method and microwave sintering(Amsterdam : Elsevier B.V., 2019) Pavithra, C.; Madhuri, W.In this paper, we focused on microwave sintered NiTiO3 nanoparticles synthesized via sol-gel method. The crystal structure was determined by the X-ray diffraction. Vibrational bands related to Ni-O and Ti-O bands were confirmed using the Fourier transform infrared spectrum. These NiTiO3 ceramics obeyed semiconductor behavior of Arrhenius type. The activation energy was found to be 0.04 μeV. The M-H curve exhibited superparamagnetic behavior at room temperature.
- ItemUltra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals(Melville, NY : AIP Publ., 2019) Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert; Irmscher, Klaus; Klimm, Detlef; Kwasniewski, Albert; Pietsch, Mike; Fiedler, Andreas; Schulze-Jonack, Isabelle; Albrecht, Martin; Schröder, Thomas; Bickermann, MatthiasTruly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films.
- ItemComprehensive scan for nonmagnetic Weyl semimetals with nonlinear optical response(London : Nature Publishing Group, 2020) Xu, Q.; Zhang, Y.; Koepernik, K.; Shi, W.; van den Brink, J.; Felser, C.; Sun, Y.First-principles calculations have recently been used to develop comprehensive databases of nonmagnetic topological materials that are protected by time-reversal or crystalline symmetry. However, owing to the low symmetry requirement of Weyl points, a symmetry-based approach to identifying topological states cannot be applied to Weyl semimetals (WSMs). To date, WSMs with Weyl points in arbitrary positions are absent from the well-known databases. In this work, we develop an efficient algorithm to search for Weyl points automatically and establish a database of nonmagnetic WSMs with Weyl points near the Fermi level based on the experimental non-centrosymmetric crystal structures in the Inorganic Crystal Structure Database (ICSD). In total, 46 Weyl semimetals were discovered to have nearly clean Fermi surfaces and Weyl points within 300 meV of the Fermi level. Nine of them are chiral structures which may exhibit the quantized circular photogalvanic effect. In addition, the nonlinear optical response is studied and the giant shift current is explored. Besides nonmagnetic WSMs, our powerful tools can also be used in the discovery of magnetic topological materials.
- ItemRemarkable performance recovery in highly defective perovskite solar cells by photo-oxidation(London [u.a.] : RSC, 2023) Goetz, Katelyn P.; Thome, Fabian T. F.; An, Qingzhi; Hofstetter, Yvonne J.; Schramm, Tim; Yangui, Aymen; Kiligaridis, Alexander; Loeffler, Markus; Taylor, Alexander D.; Scheblykin, Ivan G.; Vaynzof, YanaExposure to environmental factors is generally expected to cause degradation in perovskite films and solar cells. Herein, we show that films with certain defect profiles can display the opposite effect, healing upon exposure to oxygen under illumination. We tune the iodine content of methylammonium lead triiodide perovskite from understoichiometric to overstoichiometric and expose them to oxygen and light prior to the addition of the top layers of the device, thereby examining the defect dependence of their photooxidative response in the absence of storage-related chemical processes. The contrast between the photovoltaic properties of the cells with different defects is stark. Understoichiometric samples indeed degrade, demonstrating performance at 33% of their untreated counterparts, while stoichiometric samples maintain their performance levels. Surprisingly, overstoichiometric samples, which show low current density and strong reverse hysteresis when untreated, heal to maximum performance levels (the same as untreated, stoichiometric samples) upon the photooxidative treatment. A similar, albeit smaller-scale, effect is observed for triple cation and methylammonium-free compositions, demonstrating the general application of this treatment to state-of-the-art compositions. We examine the reasons behind this response by a suite of characterization techniques, finding that the performance changes coincide with microstructural decay at the crystal surface, reorientation of the bulk crystal structure for the understoichiometric cells, and a decrease in the iodine-to-lead ratio of all films. These results indicate that defect engineering is a powerful tool to manipulate the stability of perovskite solar cells.
- ItemStatic Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)(Pennington, NJ : ECS, 2019) Fiedler, A.; Schewski, R.; Galazka, Z.; Irmscher, K.The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019.