Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

Abstract

The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019.

Description
Keywords
Gallium compounds, Absolute values, Capacitor structures, Increasing temperatures, Monoclinic crystal structure, Principal planes, Static dielectric constants, Temperature range, Test frequencies, Crystal structure
Citation
Fiedler, A., Schewski, R., Galazka, Z., & Irmscher, K. (2019). Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001). 8(7). https://doi.org//10.1149/2.0201907jss
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License
CC BY 4.0 Unported