Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)
dc.bibliographicCitation.firstPage | Q3083 | eng |
dc.bibliographicCitation.issue | 7 | eng |
dc.bibliographicCitation.lastPage | Q3085 | eng |
dc.bibliographicCitation.volume | 8 | eng |
dc.contributor.author | Fiedler, A. | |
dc.contributor.author | Schewski, R. | |
dc.contributor.author | Galazka, Z. | |
dc.contributor.author | Irmscher, K. | |
dc.date.accessioned | 2021-09-27T11:34:50Z | |
dc.date.available | 2021-09-27T11:34:50Z | |
dc.date.issued | 2019 | |
dc.description.abstract | The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/6914 | |
dc.identifier.uri | https://doi.org/10.34657/5961 | |
dc.language.iso | eng | eng |
dc.publisher | Pennington, NJ : ECS | eng |
dc.relation.doi | https://doi.org/10.1149/2.0201907jss | |
dc.relation.essn | 2162-8777 | |
dc.relation.ispartofseries | ECS journal of solid state science and technology : JSS 8 (2019), Nr. 7 | eng |
dc.relation.issn | 2162-8769 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject | Gallium compounds | eng |
dc.subject | Absolute values | eng |
dc.subject | Capacitor structures | eng |
dc.subject | Increasing temperatures | eng |
dc.subject | Monoclinic crystal structure | eng |
dc.subject | Principal planes | eng |
dc.subject | Static dielectric constants | eng |
dc.subject | Temperature range | eng |
dc.subject | Test frequencies | eng |
dc.subject | Crystal structure | eng |
dc.subject.ddc | 540 | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 660 | eng |
dc.title | Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001) | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | ECS journal of solid state science and technology : JSS | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IKZ | eng |
wgl.subject | Chemie | eng |
wgl.type | Zeitschriftenartikel | eng |
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