Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

dc.bibliographicCitation.firstPageQ3083eng
dc.bibliographicCitation.issue7eng
dc.bibliographicCitation.lastPageQ3085eng
dc.bibliographicCitation.volume8eng
dc.contributor.authorFiedler, A.
dc.contributor.authorSchewski, R.
dc.contributor.authorGalazka, Z.
dc.contributor.authorIrmscher, K.
dc.date.accessioned2021-09-27T11:34:50Z
dc.date.available2021-09-27T11:34:50Z
dc.date.issued2019
dc.description.abstractThe relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/6914
dc.identifier.urihttps://doi.org/10.34657/5961
dc.language.isoengeng
dc.publisherPennington, NJ : ECSeng
dc.relation.doihttps://doi.org/10.1149/2.0201907jss
dc.relation.essn2162-8777
dc.relation.ispartofseriesECS journal of solid state science and technology : JSS 8 (2019), Nr. 7eng
dc.relation.issn2162-8769
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectGallium compoundseng
dc.subjectAbsolute valueseng
dc.subjectCapacitor structureseng
dc.subjectIncreasing temperatureseng
dc.subjectMonoclinic crystal structureeng
dc.subjectPrincipal planeseng
dc.subjectStatic dielectric constantseng
dc.subjectTemperature rangeeng
dc.subjectTest frequencieseng
dc.subjectCrystal structureeng
dc.subject.ddc540eng
dc.subject.ddc620eng
dc.subject.ddc660eng
dc.titleStatic Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)eng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleECS journal of solid state science and technology : JSSeng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectChemieeng
wgl.typeZeitschriftenartikeleng
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100), (010), and (001).pdf
Size:
586.44 KB
Format:
Adobe Portable Document Format
Description:
Collections