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- ItemFemtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Ringleb, Franziska; Andree, Stefan; Heidmann, Berit; Bonse, Jörn; Eylers, Katharina; Ernst, Owen; Boeck, Torsten; Schmid, Martina; Krüger, JörgMicro-concentrator solar cells offer an attractive way to further enhance the efficiency of planar-cell technologies while saving absorber material. Here, two laser-based bottom-up processes for the fabrication of regular arrays of CuInSe2 and Cu(In,Ga)Se2 microabsorber islands are presented, namely one approach based on nucleation and one based on laser-induced forward transfer. Additionally, a procedure for processing these microabsorbers to functioning micro solar cells connected in parallel is demonstrated. The resulting cells show up to 2.9% efficiency and a significant efficiency enhancement under concentrated illumination.
- ItemGrowth of crystalline phase change materials by physical deposition methods(Abingdon : Taylor & Francis Group, 2017) Boschker, Jos E.; Calarco, RaffaellaPhase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.
- ItemNumerical modelling of the czochralski growth of β-Ga2O3(Basel : MDPI, 2017) Miller, Wolfram; Böttcher, Klaus; Galazka, Zbigniew; Schreuer, JürgenOur numerical modelling of the Czochralski growth of single crystalline β-Ga2O3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga2O3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga2O3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga2O3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.
- ItemLithium metal penetration induced by electrodeposition through solid electrolytes: Example in single-crystal Li6La3ZrTaO12 garnet(Pennington, NJ : Electrochemical Society, 2018) Swamy, Tushar; Park, Richard; Sheldon, Brian W.; Rettenwander, Daniel; Porz, Lukas; Berendts, Stefan; Uecker, Reinhard; Carter, W. Craig; Chiang, Yet-MingSolid electrolytes potentially enable rechargeable batteries with lithium metal anodes possessing higher energy densities than today’s lithium ion batteries. To do so the solid electrolyte must suppress instabilities that lead to poor coulombic efficiency and short circuits. In this work, lithium electrodeposition was performed on single-crystal Li6La3ZrTaO12 garnets to investigate factors governing lithium penetration through brittle electrolytes. In single crystals, grain boundaries are excluded as paths for lithium metal propagation. Vickers microindentation was used to introduce surface flaws of known size. However, operando optical microscopy revealed that lithium metal penetration propagates preferentially from a different, second class of flaws. At the perimeter of surface current collectors smaller in size than the lithium source electrode, an enhanced electrodeposition current density causes lithium filled cracks to initiate and grow to penetration, even when large Vickers defects are in proximity. Modeling the electric field distribution in the experimental cell revealed that a 5-fold enhancement in field occurs within 10 micrometers of the electrode edge and generates high local electrochemomechanical stress. This may determine the initiation sites for lithium propagation, overriding the presence of larger defects elsewhere.
- ItemCanonical sets of best L1-approximation(New York, NY : Hindawi, 2012) Dryanov, D.; Petrov, P.In mathematics, the term approximation usually means either interpolation on a point set or approximation with respect to a given distance. There is a concept, which joins the two approaches together, and this is the concept of characterization of the best approximants via interpolation. It turns out that for some large classes of functions the best approximants with respect to a certain distance can be constructed by interpolation on a point set that does not depend on the choice of the function to be approximated. Such point sets are called canonical sets of best approximation. The present paper summarizes results on canonical sets of best L1-approximation with emphasis on multivariate interpolation and best L1-approximation by blending functions. The best L1-approximants are characterized as transfinite interpolants on canonical sets. The notion of a Haar-Chebyshev system in the multivariate case is discussed also. In this context, it is shown that some multivariate interpolation spaces share properties of univariate Haar-Chebyshev systems. We study also the problem of best one-sided multivariate L 1-approximation by sums of univariate functions. Explicit constructions of best one-sided L1-approximants give rise to well-known and new inequalities.
- ItemPerformance of fully instrumented detector planes of the forward calorimeter of a Linear Collider detector(London : Inst. of Physics, 2015) Abramowicz, H.; Abusleme, A.; Afanaciev, K.; Aguilar, J.; Alvarez, E.; Avila, D.; Benhammou, Y.; Bortko, L.; Borysov, O.; Bergholz, M.; Bozovic-Jelisavcic, I.; Castro, E.; Chelkov, G.; Coca, C.; Daniluk, W.; Dumitru, L.; Elsener, K.; Fadeyev, V.; Firlej, M.; Firu, E.; Fiutowski, T.; Ghenescu, V.; Gostkin, M.; Henschel, H.; Idzik, M.; Ishikawa, A.; Kananov, S.; Kollowa, S.; Kotov, S.; Kotula, J.; Kozhevnikov, D.; Kruchonok, V.; Krupa, B.; Kulis, Sz.; Lange, W.; Lesiak, T.; Levy, A.; Levy, I.; Lohmann, W.; Lukic, S.; Milke, C.; Moron, J.; Moszczynski, A.; Neagu, A.T.; Novgorodova, O.; Oliwa, K.; Orlandea, M.; Pandurovic, M.; Pawlik, B.; Preda, T.; Przyborowski, D.; Rosenblat, O.; Sailer, A.; Sato, Y.; Schumm, B.; Schuwalow, S.; Smiljanic, I.; Smolyanskiy, P.; Swientek, K.; Teodorescu, E.; Terlecki, P.; Wierba, W.; Wojton, T.; Yamaguchi, S.; Yamamoto, H.; Zawiejski, L.; Zgura, I.S.; Zhemchugov, A.Detector-plane prototypes of the very forward calorimetry of a future detector at an e+e− collider have been built and their performance was measured in an electron beam. The detector plane comprises silicon or GaAs pad sensors, dedicated front-end and ADC ASICs, and an FPGA for data concentration. Measurements of the signal-to-noise ratio and the response as a function of the position of the sensor are presented. A deconvolution method is successfully applied, and a comparison of the measured shower shape as a function of the absorber depth with a Monte-Carlo simulation is given.
- ItemThe spin-flip scattering effect in the spin transport in silicon doped with bismuth(Bristol : IOP Publ., 2017) Ezhevskii, A.A.; Detochenko, A.P.; Soukhorukov, A.V.; Guseinov, D.V.; Kudrin, A.V.; Abrosimov, N.V.; Riemann, H.Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013 - 7.7•1015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.
- ItemCompeting Inversion-Based Lasing and Raman Lasing in Doped Silicon(College Park, Md. : APS, 2018) Pavlov, S. G.; Deßmann, N.; Redlich, B.; van der Meer, A. F. G.; Abrosimov, N. V.; Riemann, H.; Zhukavin, R. Kh.; Shastin, V. N.; Hübers, H.-W.We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (SiBi). The medium utilizes three electronic levels: ground state [|1
- ItemCoherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity(College Park, Md. : APS, 2017) Rose, B.C.; Tyryshkin, A.M.; Riemann, H.; Abrosimov, N.V.; Becker, P.; Pohl, H.-J.; Thewalt, M.L.W.; Itoh, K.M.; Lyon, S.A.We achieve the strong-coupling regime between an ensemble of phosphorus donor spins in a highly enriched 28Si crystal and a 3D dielectric resonator. Spins are polarized beyond Boltzmann equilibrium using spin-selective optical excitation of the no-phonon bound exciton transition resulting in N=3.6×1013 unpaired spins in the ensemble. We observe a normal mode splitting of the spin-ensemble–cavity polariton resonances of 2g√N=580 kHz (where each spin is coupled with strength g) in a cavity with a quality factor of 75 000 (γ≪κ≈60 kHz, where γ and κ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T∗2=9 μs) providing a wide window for viewing the dynamics of the coupled spin-ensemble–cavity system. The free-induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate g√N. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z projection of the psuedospin using optical excitation and microwave manipulation, respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt π-phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model.
- ItemTerahertz stimulated emission from silicon doped by hydrogenlike acceptors(College Park : American Institute of Physics Inc., 2014) Pavlov, S.G.; Deßmann, N.; Shastin, V.N.; Zhukavin, R.K.; Redlich, B.; van der Meer, A.F.G.; Mittendorff, M.; Winnerl, S.; Abrosimov, N.V.; Riemann, H.; Hübers, H.-W.Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.