Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
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Date
2018
Volume
8
Issue
4
Journal
Physical Review X
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Publisher
College Park, Md. : APS
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Abstract
We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (SiBi). The medium utilizes three electronic levels: ground state [|1
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Citation
Pavlov, S. G., Deßmann, N., Redlich, B., van der Meer, A. F. G., Abrosimov, N. V., Riemann, H., et al. (2018). Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon (College Park, Md. : APS). College Park, Md. : APS. https://doi.org//10.1103/physrevx.8.041003
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CC BY 4.0 Unported