Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

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dc.bibliographicCitation.firstPage041003
dc.bibliographicCitation.issue4
dc.bibliographicCitation.journalTitlePhysical Review Xeng
dc.bibliographicCitation.volume8
dc.contributor.authorPavlov, S. G.
dc.contributor.authorDeßmann, N.
dc.contributor.authorRedlich, B.
dc.contributor.authorvan der Meer, A. F. G.
dc.contributor.authorAbrosimov, N. V.
dc.contributor.authorRiemann, H.
dc.contributor.authorZhukavin, R. Kh.
dc.contributor.authorShastin, V. N.
dc.contributor.authorHübers, H.-W.
dc.date.accessioned2023-03-06T07:55:38Z
dc.date.available2023-03-06T07:55:38Z
dc.date.issued2018
dc.description.abstractWe report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (SiBi). The medium utilizes three electronic levels: ground state [|1eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11688
dc.identifier.urihttp://dx.doi.org/10.34657/10721
dc.language.isoeng
dc.publisherCollege Park, Md. : APS
dc.relation.doihttps://doi.org/10.1103/physrevx.8.041003
dc.relation.essn2160-3308
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subject.ddc530
dc.subject.otherCondensed Matter Physicseng
dc.subject.otherNonlinear Dynamicseng
dc.subject.otherPhotonicseng
dc.titleCompeting Inversion-Based Lasing and Raman Lasing in Doped Siliconeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIKZ
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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