2004, Däweritz, L.

Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic or spin related functions into semiconductor materials and devices. Fe-on-GaAs and MnAs-on-GaAs are canditates for potential room temperature applications. We review our recent results on growth, structural and magnetic properties of these materials, and their use as spin injectors. The most critical issue of Fe/GaAs heterostructures is the delicate interface formation during epitaxy and its possible modification during subsequent processing. The properties of the MnAs/GaAs heterostructures are intimately related to the phase transition between ferromagnetic and paramagnetic phases.

2005, Ploog, Klaus H., Braun, Wolfgang, Kaganer, Vladimir M., Jenichen, Bernd, Satapathy, Dillip K.

[no abstract available]

2000, Däweritz, Lutz, Hey, Rudolf, Herfort, Jens

[no abstract available]

2008, Stotz, J.A.H., Hey, R., Santos, P.V., Ploog, K.H.

Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement condition to control electron spin dephasing is governed by the relation between the characteristic spin–orbit length of the electron spins and the dimensions of the dot potential, which governs the electron spin coherence lifetime. The spin–orbit length is a sample-dependent parameter determined by the Dresselhaus contribution to the spin–orbit coupling and can be predictably controlled by varying the sample geometry. We further show that the coherence lifetime of the electron spins is independent of the local carrier densities within each potential dot, which suggests the possibility of coherent, long-range transport of single electron spins.

2005, Ploog, Klaus H., Herfort, Jens, Ramsteiner, Manfred, Trampert, Achim, Friedland, Klaus-Jürgen

[no abstract available]

2007, Braun, Wolfgang

[no abstract available]

2007, Luna, E., Trampert, A., Pavelescu, E.-M., Pessa, M.

Transmission electron microscopy (TEM) is used to determine the composition of quaternary (Ga,In)(N,As) quantum wells (QWs). Through a combined analysis of the chemically sensitive (002) dark-field (DF) images and the lattice-resolving high-resolution TEM images, the local distributions of nitrogen and indium in the growth direction are determined. In particular, we are able to directly detect the existence of indium segregation in (Ga,In)(N,As) QWs. A comparison with the indium distribution profile in the nitrogen-free (In,Ga)As QWs, grown under similar conditions, revealed that incorporating N into the alloy enhanced indium segregation.

2009, Herfort, Jens, Koch, Reinhold, Trampert, Achim

[no abstract available]