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- ItemSearching for order in atmospheric pressure plasma jets(Bristol : IOP Publ., 2017-11-10) Schäfer, Jan; Sigeneger, Florian; Å perka, Jir̀ŒĂ; Rodenburg, Cornelia; Foest, RĂ¼digerThe self-organized discharge behaviour occurring in a non-thermal radio-frequency plasma jet in rare gases at atmospheric pressure was investigated. The frequency of the azimuthal rotation of filaments in the active plasma volume and their inclination were measured along with the gas temperature under varying discharge conditions. The gas flow and heating were described theoretically by a three-dimensional hydrodynamic model. The rotation frequencies obtained by both methods qualitatively agree. The results demonstrate that the plasma filaments forming an inclination angle α with the axial gas velocity uz are forced to a transversal movement with the velocity uφ=tan(α)*uz, which is oriented in the inclination direction. Variations of ${u}_{\phi }$ in the model reveal that the observed dynamics minimizes the energy loss due to convective heat transfer by the gas flow. The control of the self-organization regime motivates the application of the plasma jet for precise and reproducible material processing.
- ItemTransition to the quantum hall regime in InAs nanowire cross-junctions(Bristol : IOP Publ., 2019) Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Bologna, Nicolas; Rossell, Marta D.; Wirths, Stephan; Moselund, Kirsten; Nielsch, Kornelius; Riel, HeikeWe present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2 /h) -1 . e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. © 2019 IOP Publishing Ltd.
- ItemHigh-performance SiGe HBTs for next generation BiCMOS technology(Bristol : IOP Publ., 2018) RĂ¼cker, Holger; Heinemann, BerndThis paper addresses fabrication aspects of SiGe heterojunction bipolar transistors which record high-speed performance. We previously reported fT values of 505 GHz, fMAX values of 720 GHz, and ring oscillator gate delays of 1.34 ps for these transistors. The impact of critical process steps on radio frequency performance is discussed. This includes millisecond annealing for enhanced dopant activation and optimization of the epitaxial growth process of the base layer. It is demonstrated that the use of a disilane precursor instead of silane can result in reduced base resistance and favorable device scalability.
- ItemLattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate(Bristol : IOP Publ., 2019) Jenichen, B.; Cheng, Z.; Hanke, M.; Herfort, J.; Trampert, A.We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd.