Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate
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Date
2019
Volume
34
Issue
12
Journal
Series Titel
Book Title
Publisher
Bristol : IOP Publ.
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Abstract
We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd.
Description
Keywords
ferromagnetic film, metal on semiconductor, molecular beam epitaxy, Volmer Weber growth
Citation
Jenichen, B., Cheng, Z., Hanke, M., Herfort, J., & Trampert, A. (2019). Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate. 34(12).
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License
CC BY 3.0 Unported