Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate

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dc.bibliographicCitation.firstPage124002eng
dc.bibliographicCitation.issue12eng
dc.bibliographicCitation.journalTitleSemiconductor Science and Technologyeng
dc.bibliographicCitation.volume34eng
dc.contributor.authorJenichen, B.
dc.contributor.authorCheng, Z.
dc.contributor.authorHanke, M.
dc.contributor.authorHerfort, J.
dc.contributor.authorTrampert, A.
dc.date.accessioned2022-05-10T12:03:45Z
dc.date.available2022-05-10T12:03:45Z
dc.date.issued2019
dc.description.abstractWe investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8932
dc.identifier.urihttps://doi.org/10.34657/7970
dc.language.isoengeng
dc.publisherBristol : IOP Publ.eng
dc.relation.essn1361-6641
dc.relation.issn0268-1242
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.subject.ddc620eng
dc.subject.otherferromagnetic filmeng
dc.subject.othermetal on semiconductoreng
dc.subject.othermolecular beam epitaxyeng
dc.subject.otherVolmer Weber growtheng
dc.titleLattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rateeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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