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- ItemIndependent Geometrical Control of Spin and Charge Resistances in Curved Spintronics(Washington, DC : ACS Publ., 2019) Das, Kumar Sourav; Makarov, Denys; Gentile, Paola; Cuoco, Mario; Van Wees, Bart J.; Ortix, Carmine; Vera-Marun, Ivan J.Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with a higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can be used to reach an independent tuning of spin transport and charge transport characteristics. These results laid the foundation for the design of efficient pure spin current-based electronics, which can be integrated in complex three-dimensional architectures. © 2019 American Chemical Society.
- ItemThe influence of partial replacement of Cu with Ga on the corrosion behavior of Ti40Zr10Cu36PD14 metallic glasses(Bristol : IOP Publishing, 2019) Wei, Qi; Gostin, Petre Flaviu; Addison, Owen; Reed, Daniel; Calin, Mariana; Bera, Supriya; Ramasamy, Parthiban; Davenport, AlisonTiZrCuPdGa metallic glasses are under consideration for small dental biomedical implants. There is interest in replacing some of the Cu with Ga to improve the glass-forming ability and biocompatibility. Ti40Zr10Cu36-xPd14Gax (x = 0, 1, 2, 4, 8 and 10 at.%) metallic glasses in rod and ribbon forms were fabricated by mould casting and melt spinning, respectively, and electrochemically tested in a 0.9wt.% NaCl (0.154 M) solution. It has been shown that for both rod and ribbon samples Ga levels up to 8% have no significant effect on passive current density, pitting potential or cathodic reactivity in 0.9% NaCl at 37°C. Different pitting potential and corrosion potential values were found when ribbon and rod samples of the same composition were compared for all compositions apart from the one containing the highest Ga level (10%). This was attributed to structural relaxation occurring as a result of the slower cooling rates during casting rods compared with melt-spinning ribbons. Substitution of Ga for Cu in these metallic glasses therefore expected to have no significant effect on corrosion susceptibility. © The Author(s) 2019.
- ItemNanomagnetism of Magnetoelectric Granular Thin-Film Antiferromagnets(Washington, DC : ACS Publ., 2019) Appel, Patrick; Shields, Brendan J.; Kosub, Tobias; Hedrich, Natascha; Hübner, René; Faßbender, Jürgen; Makarov, Denys; Maletinsky, PatrickAntiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared with their ferromagnetic counterparts. Whereas nanoscale thin-film materials are key to the development of future antiferromagnetic spintronic technologies, existing experimental tools tend to suffer from low resolution or expensive and complex equipment requirements. We offer a simple, high-resolution alternative by addressing the ubiquitous surface magnetization of magnetoelectric antiferromagnets in a granular thin-film sample on the nanoscale using single-spin magnetometry in combination with spin-sensitive transport experiments. Specifically, we quantitatively image the evolution of individual nanoscale antiferromagnetic domains in 200 nm thin films of Cr 2 O 3 in real space and across the paramagnet-to-antiferromagnet phase transition, finding an average domain size of 230 nm, several times larger than the average grain size in the film. These experiments allow us to discern key properties of the Cr 2 O 3 thin film, including the boundary magnetic moment density, the variation of critical temperature throughout the film, the mechanism of domain formation, and the strength of exchange coupling between individual grains comprising the film. Our work offers novel insights into the magnetic ordering mechanism of Cr 2 O 3 and firmly establishes single-spin magnetometry as a versatile and widely applicable tool for addressing antiferromagnetic thin films on the nanoscale. © 2019 American Chemical Society.
- ItemTheoretical Prediction of a Giant Anisotropic Magnetoresistance in Carbon Nanoscrolls(Washington, DC : ACS Publ., 2017-4-12) Chang, Ching-Hao; Ortix, CarmineSnake orbits are trajectories of charge carriers curving back and forth that form at an interface where either the magnetic field direction or the charge carrier type are inverted. In ballistic samples, their presence is manifested in the appearance of magnetoconductance oscillations at small magnetic fields. Here we show that signatures of snake orbits can also be found in the opposite diffusive transport regime. We illustrate this by studying the classical magnetotransport properties of carbon tubular structures subject to relatively weak transversal magnetic fields where snake trajectories appear in close proximity to the zero radial field projections. In carbon nanoscrolls, the formation of snake orbits leads to a strongly directional dependent positive magnetoresistance with an anisotropy up to 80%.
- ItemSerrated flow of CuZr-based bulk metallic glasses probed by nanoindentation: Role of the activation barrier, size and distribution of shear transformation zones(Amsterdam [u.a.] : Elsevier Science, 2017) Limbach, R.; Kosiba, K.; Pauly, S.; Kühn, U.; Wondraczek, L.We report on the effect of Al and Co alloying in vitreous Cu50Zr50 on local deformation and serrated flow as a model for relating the size and localization of shear transformation zones (STZ) to Poisson ratio and strain-rate sensitivity of metallic glasses. Alloying with Al results in significant variations in mechanical performance, in particular, in Young's modulus, hardness and strain-rate sensitivity. Increasing strain-rate sensitivity with increasing degree of alloying indicates a reduced tendency for shear localization. In parallel, a gradual transition from inhomogeneous to homogeneous plastic flow is observed. Using a statistical analysis of the shear stress associated with the initiation of the first pop-in in the load-displacement curve during spherical indentation, the activation volume for plastic flow at the onset of yielding is reported. This analysis is employed for experimental evaluation of the compositional dependence of activation barrier, size and distribution of STZs. It is demonstrated that the STZ size does not change significantly upon Al alloying and encompasses a local volume of around 22–24 atoms. However, the barrier energy density for the initiation of a single STZ progressively increases. The broader distribution of STZs impedes their accumulation into larger-size flow units, leading to a lower number and reduced size of serrations in the load-displacement curve. On the contrary, lower barrier energy densities enable a larger quantity of STZs to be activated simultaneously. These STZs can easily percolate into large flow units, promoting plastic flow through their interaction. We employ Poisson's ratio as an indicator for plasticity to shown that this interpretation can be transferred to other types of metallic glasses. That is, larger flow units were found for metallic glasses with higher Poisson ratio and more pronounced plasticity, while the flow units in alloys with very low Poisson ratio and high brittleness are significantly reduced in size and more homogeneously distributed throughout the material.
- ItemPAH/PAH(CF3)n Donor/Acceptor Charge-Transfer Complexes in Solution and in Solid-State Co-Crystals(Weinheim : Wiley-VCH, 2019) Castro, Karlee P.; Bukovsky, Eric V.; Kuvychko, Igor V.; DeWeerd, Nicholas J.; Chen, Yu-Sheng; Deng, Shihu H.M.; Wang, Xue-Bin; Popov, Alexey A.; Strauss, Steven H.; Boltalina, Olga V.A solution, solid-state, and computational study is reported of polycyclic aromatic hydrocarbon PAH/PAH(CF3)n donor/acceptor (D/A) charge-transfer complexes that involve six PAH(CF3)n acceptors with known gas-phase electron affinities that range from 2.11(2) to 2.805(15) eV and four PAH donors, including seven CT co-crystal X-ray structures that exhibit hexagonal arrays of mixed π-stacks with 1/1, 1/2, or 2/1 D/A stoichiometries (PAH=anthracene, azulene, coronene, perylene, pyrene, triphenylene; n=5, 6). These are the first D/A CT complexes with PAH(CF3)n acceptors to be studied in detail. The nine D/A combinations were chosen to allow several structural and electronic comparisons to be made, providing new insights about controlling D/A interactions and the structures of CT co-crystals. The comparisons include, among others, CT complexes of the same PAH(CF3)n acceptor with four PAH donors and CT complexes of the same donor with four PAH(CF3)n acceptors. All nine CT complexes exhibit charge-transfer bands in solution with λmax between 467 and 600 nm. A plot of E(λmax) versus [IE(donor)−EA(acceptor)] for the nine CT complexes studied is linear with a slope of 0.72±0.03 eV eV−1. This plot is the first of its kind for CT complexes with structurally related donors and acceptors for which precise experimental gas-phase IEs and EAs are known. It demonstrates that conclusions based on the common assumption that the slope of a CT E(λmax) versus [IE−EA] plot is unity may be incorrect in at least some cases and should be reconsidered. © 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemThree-Dimensional Composition and Electric Potential Mapping of III–V Core–Multishell Nanowires by Correlative STEM and Holographic Tomography(Washington, DC : ACS Publ., 2018-7-13) Wolf, Daniel; Hübner, René; Niermann, Tore; Sturm, Sebastian; Prete, Paola; Lovergine, Nico; Büchner, Bernd; Lubk, AxelThe nondestructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in three-dimension but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential, MIP) and space charges. In this Letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual ⟨111⟩ oriented GaAs–AlGaAs core–multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au–NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.
- ItemA High-Voltage, Dendrite-Free, and Durable Zn–Graphite Battery(Weinheim : Wiley-VCH, 2019) Wang, Gang; Kohn, Benjamin; Scheler, Ulrich; Wang, Faxing; Oswald, Steffen; Löffler, Markus; Tan, Deming; Zhang, Panpan; Zhang, Jian; Feng, XinliangThe intrinsic advantages of metallic Zn, like high theoretical capacity (820 mAh g−1), high abundance, low toxicity, and high safety have driven the recent booming development of rechargeable Zn batteries. However, the lack of high-voltage electrolyte and cathode materials restricts the cell voltage mostly to below 2 V. Moreover, dendrite formation and the poor rechargeability of the Zn anode hinder the long-term operation of Zn batteries. Here a high-voltage and durable Zn–graphite battery, which is enabled by a LiPF6-containing hybrid electrolyte, is reported. The presence of LiPF6 efficiently suppresses the anodic oxidation of Zn electrolyte and leads to a super-wide electrochemical stability window of 4 V (vs Zn/Zn2+). Both dendrite-free Zn plating/stripping and reversible dual-anion intercalation into the graphite cathode are realized in the hybrid electrolyte. The resultant Zn–graphite battery performs stably at a high voltage of 2.8 V with a record midpoint discharge voltage of 2.2 V. After 2000 cycles at a high charge–discharge rate, high capacity retention of 97.5% is achieved with ≈100% Coulombic efficiency. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- ItemThe Effect of Boron Content on Wetting Kinetics in Si-B Alloy/h-BN System(New York, NY : Springer, 2019) Polkowski, Wojciech; Sobczak, Natalia; Bruzda, Grzegorz; Nowak, Rafał; Giuranno, Donatella; Kudyba, Artur; Polkowska, Adelajda; Pajor, Krzysztof; Kozieł, Tomasz; Kaban, IvanIn this work, the effect of boron content on the high-temperature wetting behavior in the Si-B alloy/h-BN systems was experimentally examined. For this reason, hypoeutectic, eutectic and hypereutectic Si-B alloys (Si-1B, Si-3.2B and Si-5.7B wt.%, respectively) were produced by electric arc melting method and then subjected to sessile drop/contact heating experiments with polycrystalline h-BN substrates, at temperatures up to 1750 °C. Similar to pure Si/h-BN system, wetting kinetics curves calculated on a basis of in situ recorded drop/substrate images point toward non-wetting behavior of all selected Si-B alloy/h-BN couples. The highest contact angle values of ~ 150° were obtained for hypoeutectic and eutectic Si-B alloys in the whole examined temperature range. © 2018, The Author(s).
- ItemPhonon-Assisted Two-Photon Interference from Remote Quantum Emitters(Washington, DC : ACS Publ., 2017-6-7) Reindl, Marcus; Jöns, Klaus D.; Huber, Daniel; Schimpf, Christian; Huo, Yongheng; Zwiller, Val; Rastelli, Armando; Trotta, RinaldoPhotonic quantum technologies are on the verge of finding applications in everyday life with quantum cryptography and quantum simulators on the horizon. Extensive research has been carried out to identify suitable quantum emitters and single epitaxial quantum dots have emerged as near-optimal sources of bright, on-demand, highly indistinguishable single photons and entangled photon-pairs. In order to build up quantum networks, it is essential to interface remote quantum emitters. However, this is still an outstanding challenge, as the quantum states of dissimilar “artificial atoms” have to be prepared on-demand with high fidelity and the generated photons have to be made indistinguishable in all possible degrees of freedom. Here, we overcome this major obstacle and show an unprecedented two-photon interference (visibility of 51 ± 5%) from remote strain-tunable GaAs quantum dots emitting on-demand photon-pairs. We achieve this result by exploiting for the first time the full potential of a novel phonon-assisted two-photon excitation scheme, which allows for the generation of highly indistinguishable (visibility of 71 ± 9%) entangled photon-pairs (fidelity of 90 ± 2%), enables push-button biexciton state preparation (fidelity of 80 ± 2%) and outperforms conventional resonant two-photon excitation schemes in terms of robustness against environmental decoherence. Our results mark an important milestone for the practical realization of quantum repeaters and complex multiphoton entanglement experiments involving dissimilar artificial atoms.