29 results
Search Results
Now showing 1 - 10 of 29
- ItemAnalysis of catalyst surface wetting: The early stage of epitaxial germanium nanowire growth(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Ernst, Owen C.; Lange, Felix; Uebel, David; Teubner, Thomas; Boeck, TorstenThe dewetting process is crucial for several applications in nanotechnology. Even though not all dewetting phenomena are fully understood yet, especially regarding metallic fluids, it is clear that the formation of nanometre-sized particles, droplets, and clusters as well as their movement are strongly linked to their wetting behaviour. For this reason, the thermodynamic stability of thin metal layers (0.1-100 nm) with respect to their free energy is examined here. The decisive factor for the theoretical considerations is the interfacial energy. In order to achieve a better understanding of the interfacial interactions, three different models for estimating the interfacial energy are presented here: (i) fully theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the possibility to further process the obtained particles as nanocatalysts is verified. The importance of a persistent thin communication wetting layer between the particles and its effects on particle size and number is also clarified here. In particular, the intrinsic reduction of the Laplace pressure of the system due to material re-evaporation and Ostwald ripening describes the theoretically predicted and experimentally obtained results. Thus, dewetting phenomena of thin metal layers can be used to manufacture nanostructured devices. From this point of view, the application of gold droplets as catalysts to grow germanium nanowires on different substrates is described. © 2020 Ernst et al.
- ItemThe Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State Batteries(Weinheim : Wiley-VCH, 2020) Philipp, Martin; Gadermaier, Bernhard; Posch, Patrick; Hanzu, Ilie; Ganschow, Steffen; Meven, Martin; Rettenwander, Daniel; Redhammer, Günther J.; Wilkening, H. Martin R.The next-generation of all-solid-state lithium batteries need ceramic electrolytes with very high ionic conductivities. At the same time a negligible electronic conductivity σeon is required to eliminate self-discharge in such systems. A non-negligible electronic conductivity may also promote the unintentional formation of Li dendrites, being currently one of the key issues hindering the development of long-lasting all-solid-state batteries. This interplay is suggested recently for garnet-type Li7La3Zr2O12 (LLZO). It is, however, well known that the overall macroscopic electronic conductivity may be governed by a range of extrinsic factors such as impurities, chemical inhomogeneities, grain boundaries, morphology, and size effects. Here, advantage of Czochralski-grown single crystals, which offer the unique opportunity to evaluate intrinsic properties of a chemically homogeneous matrix, is taken to measure the electronic conductivity σeon. Via long-time, high-precision potentiostatic polarization experiments an upper limit of σeon in the order of 5 × 10−10 S cm−1 (293 K) is estimated. This value is by six orders of magnitude lower than the corresponding total conductivity σtotal = 10−3 S cm−1 of Ga-LLZO. Thus, it is concluded that the high values of σeon recently reported for similar systems do not necessarily mirror intragrain bulk properties of chemically homogenous systems but may originate from chemically inhomogeneous interfacial areas. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemHigh-temperature annealing of AlN films grown on 4H-SiC(New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).
- ItemCharge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals(New York, NY : American Inst. of Physics, 2020) Boy, Johannes; Handwerg, Martin; Mitdank, Rüdiger; Galazka, Zbigniew; Fischer, Saskia F.The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
- ItemApplication of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials(Basel : MDPI, 2020) Dropka, Natasha; Holena, MartinIn this review, we summarize the results concerning the application of artificial neural networks (ANNs) in the crystal growth of electronic and opto-electronic materials. The main reason for using ANNs is to detect the patterns and relationships in non-linear static and dynamic data sets which are common in crystal growth processes, all in a real time. The fast forecasting is particularly important for the process control, since common numerical simulations are slow and in situ measurements of key process parameters are not feasible. This important machine learning approach thus makes it possible to determine optimized parameters for high-quality up-scaled crystals in real time. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemLumped Parameter Model for Silicon Crystal Growth from Granulate Crucible(Weinheim : Wiley-VCH, 2020) Lorenz-Meyer, M. Nicolai L.; Menzel, Robert; Dadzis, Kaspars; Nikiforova, Angelina; Riemann, HelgeIn the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemElastic properties of single crystal Bi12SiO20 as a function of pressure and temperature and acoustic attenuation effects in Bi12 MO20 (M = Si, Ge and Ti)(Bristol : IOP Publ., 2020) Haussühl, Eiken; Reichmann, Hans Josef; Schreuer, Jürgen; Friedrich, Alexandra; Hirschle, Christian; Bayarjargal, Lkhamsuren; Winkler, Björn; Alencar, Igor; Wiehl, Leonore; Ganschow, SteffenA comprehensive study of sillenite Bi12SiO20 single-crystal properties, including elastic stiffness and piezoelectric coefficients, dielectric permittivity, thermal expansion and molar heat capacity, is presented. Brillouin-interferometry measurements (up to 27 GPa), which were performed at high pressures for the first time, and ab initio calculations based on density functional theory (up to 50 GPa) show the stability of the sillenite structure in the investigated pressure range, in agreement with previous studies. Elastic stiffness coefficients c 11 and c 12 are found to increase continuously with pressure while c 44 increases slightly for lower pressures and remains nearly constant above 15 GPa. Heat-capacity measurements were performed with a quasi-adiabatic calorimeter employing the relaxation method between 2 K and 395 K. No phase transition could be observed in this temperature interval. Standard molar entropy, enthalpy change and Debye temperature are extracted from the data. The results are found to be roughly half of the previous values reported in the literature. The discrepancy is attributed to the overestimation of the Debye temperature which was extracted from high-temperature data. Additionally, Debye temperatures obtained from mean sound velocities derived by Voigt-Reuss averaging are in agreement with our heat-capacity results. Finally, a complete set of electromechanical coefficients was deduced from the application of resonant ultrasound spectroscopy between 103 K and 733 K. No discontinuities in the temperature dependence of the coefficients are observed. High-temperature (up to 1100 K) resonant ultrasound spectra recorded for Bi12 MO20 crystals revealed strong and reversible acoustic dissipation effects at 870 K, 960 K and 550 K for M = Si, Ge and Ti, respectively. Resonances with small contributions from the elastic shear stiffness c 44 and the piezoelectric stress coefficient e 123 are almost unaffected by this dissipation. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemLocal electronic structure in AlN studied by single-crystal 27Al and 14N NMR and DFT calculations(Basel : MDPI, 2020) Zeman, Otto E.O.; Moudrakovski, Igor L.; Hartmann, Carsten; Indris, Sylvio; Bräuniger, ThomasBoth the chemical shift and quadrupole coupling tensors for 14N and 27Al in the wurtzite structure of aluminum nitride have been determined to high precision by single-crystal NMR spectroscopy. A homoepitaxially grown AlN single crystal with known morphology was used, which allowed for optical alignment of the crystal on the goniometer axis. From the analysis of the rotation patterns of 14N (I = 1) and 27Al (I = 5/2), the quadrupolar coupling constants were determined to ?(14N) = (8.19 ± 0.02) kHz, and ?(27Al) = (1.914 ± 0.001) MHz. The chemical shift parameters obtained from the data fit were diso = -(292.6 ± 0.6) ppm and d? = -(1.9 ± 1.1) ppm for 14N, and (after correcting for the second-order quadrupolar shift) diso = (113.6 ± 0.3) ppm and d? = (12.7 ± 0.6) ppm for 27Al. DFT calculations of the NMR parameters for non-optimized crystal geometries of AlN generally did not match the experimental values, whereas optimized geometries came close for 27Al with ?calc = (1.791 ± 0.003) MHz, but not for 14N with ?calc = -(19.5 ± 3.3) kHz. © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
- ItemModeling of GERDA Phase II data(Berlin ; Heidelberg : Springer , 2020) Agostini, Matteo; Bakalyarov, Alexander M.; Balata, Marco; Barabanov, Igor; Baudis, Laura; Bauer, Christian; Bellotti, Enrico; Belogurov, Sergej; Bettini, Alessandro; Bezrukov, Leonid; Borowicz, Dariusz; Stukov, Danila; Vanhoefer, Laura; Vasenko, Andrey A.; Veresnikova, Anna; Vignoli, Chiara; von Sturm, Katharina; Wester, Thomas; Wiesinger, Christoph; Wojcik, Marcin; Yanovich, Evgeny; Zatschler, Birgit; Zhitnikov, Igor; Zhukov, Sergey V.; Zinatulina, Daniya; Zschocke, Andreas; Zsigmond, Anna J.; Zuber, Kai; Zuzel, Grzegorz; Bossio, Elisabetta; Bothe, Vikas; Brudanin, Victor; Brugnera, Riccardo; Caldwell, Allen; Cattadori, Carla; Chernogorov, Andrey; Comellato, Tommaso; D'Andrea, Valerio; Demidova, Elena V.; Di Marco, Natalia; Domula, Alexander; Doroshkevich, Evgenyi; Egorov, Viacheslav; Fischer, Felix; Fomina, Maria; Gangapshev, Albert; Garfagnini, Alberto; Gooch, Chris; Grabmayr, Peter; Gurentsov, Valery; Gusev, Konstantin; Hakenmüller, Janina; Hemmer, Sabine; Hiller, Roman; Hofmann, Werner; Hult, Mikael; Inzhechik, Lev V.; Janicskó Csáthy, Jozsef; Jochum, Josef; Junker, Matthias; Kazalov, Vladimir; Kermaïdic, Yoann; Kihm, Thomas; Kirpichnikov, Igor V.; Klimenko, Alexander; Kneißl, Raphael; Knöpfle, Karl T.; Kochetov, Oleg; Kornoukhov, Vasily N.; Krause, Patrick; Kuzminov, Valery V.; Laubenstein, Matthias; Lazzaro, Andrea; Lindner, Manfred; Lippi, I.; Lubashevskiy, Alexey; Lubsandorzhiev, Bayarto; Lutter, Guillaume; Macolino, Carla; Majorovits, Bela; Maneschg, Werner; Miloradovic, Michael; Mingazheva, Rizalina; Misiaszek, Marcin; Moseev, Pavel; Nemchenok, Igor; Panas, Krysztof; Pandola, Luciano; Pelczar, Krysztof; Pertoldi, Luigi; Piseri, Paolo; Pullia, Alberto; Ransom, Chloe; Riboldi, Stefano; Rumyantseva, Nadezda; Sada, Cinzia; Salamida, Francesco; Schönert, Stefan; Schreiner, Jochen; Schütt, Mario; Schütz, Ann-Katrin; Schulz, Oliver; Schwarz, Mario; Schwingenheuer, Bernhard; Selivanenko, Oleg; Shevchik, Egor; Shirchenko, Mark; Simgen, Hardy; Smolnikov, AnatolyThe GERmanium Detector Array (Gerda) experiment at the Gran Sasso underground laboratory (LNGS) of INFN is searching for neutrinoless double-beta (0νββ) decay of 76Ge. The technological challenge of Gerda is to operate in a “background-free” regime in the region of interest (ROI) after analysis cuts for the full 100 kg·yr target exposure of the experiment. A careful modeling and decomposition of the full-range energy spectrum is essential to predict the shape and composition of events in the ROI around Qββ for the 0νββ search, to extract a precise measurement of the half-life of the double-beta decay mode with neutrinos (2νββ) and in order to identify the location of residual impurities. The latter will permit future experiments to build strategies in order to further lower the background and achieve even better sensitivities. In this article the background decomposition prior to analysis cuts is presented for Gerda Phase II. The background model fit yields a flat spectrum in the ROI with a background index (BI) of 16.04+0.78−0.85⋅10−3 cts/(keV·kg·yr) for the enriched BEGe data set and 14.68+0.47−0.52⋅10−3 cts/(keV·kg·yr) for the enriched coaxial data set. These values are similar to the one of Phase I despite a much larger number of detectors and hence radioactive hardware components.
- ItemThe natural critical current density limit for Li7La3Zr2O12 garnets(London [u.a.] : RSC, 2020) Flatscher, Florian; Philipp, Martin; Ganschow, Steffen; Wilkening, H. Martin R.; Rettenwander, DanielCeramic batteries equipped with Li-metal anodes are expected to double the energy density of conventional Li-ion batteries. Besides high energy densities, also high power is needed when batteries have to be developed for electric vehicles. Practically speaking, so-called critical current densities (CCD) higher than 3 mA cm-2 are needed to realize such systems. As yet, this value has, however, not been achieved for garnet-type Li7La3Zr2O12 (LLZO) being one of the most promising ceramic electrolytes. Most likely, CCD values are influenced by the area specific resistance (ASR) governing ionic transport across the Li|electrolyte interface. Here, single crystals of LLZO with adjusted ASR are used to quantify this relationship in a systematic manner. It turned out that CCD values exponentially decrease with increasing ASR. The highest obtained CCD value was as high as 280 µA cm-2. This value should be regarded as the room-temperature limit for LLZO when no external pressure is applied. Concluding, for polycrystalline samples either stack pressure or a significant increase of the interfacial area is needed to reach current densities equal or higher than the above-mentioned target value. This journal is © The Royal Society of Chemistry.
- «
- 1 (current)
- 2
- 3
- »