Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Keywords

Carrier concentration, Crystal impurities, Gallium compounds, Hall mobility, Seebeck coefficient, Semiconductor doping, Single crystals, Temperature distribution, Zinc compounds, Degenerate semiconductors, Electrical conductivity, High electron concentration, Ionized impurities, Low temperatures, Phonon drag effects, Temperature dependence, Unintentional doping, Hole mobility

URI

https://oa.tib.eu/renate/handle/123456789/6642
https://doi.org/10.34657/5689

Citation

Boy, J., Handwerg, M., Mitdank, R., Galazka, Z., & Fischer, S. F. (2020). Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals. 10(5). https://doi.org//10.1063/5.0002847

Collections

Physik

License

CC BY 4.0 Unported

https://creativecommons.org/licenses/by/4.0/

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