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- ItemModulation Linearity Characterization of Si Ring Modulators(Washington, DC : OSA, 2021) Jo, Youngkwan; Mai, Christian; Lischke, Stefan; Zimmermann, Lars; Choi, Woo-YoungModulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
- Item240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology(New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, DietmarThis article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
- ItemMillimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies(New York, NY : IEEE, 2021) Kissinger, Dietmar; Kahmen, Gerhard; Weigel, RobertThis invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.
- ItemDesign and Evaluation of Radiation-Hardened Standard Cell Flip-Flops(New York, NY : Institute of Electrical and Electronics Engineers, 2021) Schrape, Oliver; Andjelkovic, Marko; Breitenreiter, Anselm; Zeidler, Steffen; Balashov, Alexey; Krstic, MilosUse of a standard non-rad-hard digital cell library in the rad-hard design can be a cost-effective solution for space applications. In this paper we demonstrate how a standard non-rad-hard flip-flop, as one of the most vulnerable digital cells, can be converted into a rad-hard flip-flop without modifying its internal structure. We present five variants of a Triple Modular Redundancy (TMR) flip-flop: baseline TMR flip-flop, latch-based TMR flip-flop, True-Single Phase Clock (TSPC) TMR flip-flop, scannable TMR flip-flop and self-correcting TMR flip-flop. For all variants, the multi-bit upsets have been addressed by applying special placement constraints, while the Single Event Transient (SET) mitigation was achieved through the usage of customized SET filters and selection of optimal inverter sizes for the clock and reset trees. The proposed flip-flop variants feature differing performance, thus enabling to choose the optimal solution for every sensitive node in the circuit, according to the predefined design constraints. Several flip-flop designs have been validated on IHP’s 130nm BiCMOS process, by irradiation of custom-designed shift registers. It has been shown that the proposed TMR flip-flops are robust to soft errors with a threshold Linear Energy Transfer (LET) from ( 32.4 (MeV⋅cm2/mg) ) to ( 62.5 (MeV⋅cm2/mg) ), depending on the variant.
- ItemCMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes(Washington, DC : ACS Publications, 2021) Talamas Simola, Enrico; Kiyek, Vivien; Ballabio, Andrea; Schlykow, Viktoria; Frigerio, Jacopo; Zucchetti, Carlo; De Iacovo, Andrea; Colace, Lorenzo; Yamamoto, Yuji; Capellini, Giovanni; Grützmacher, Detlev; Buca, Dan; Isella, GiovanniInfrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis, demonstrated by identifying the wavelength of a monochromatic beam. © 2021 The Authors. Published by American Chemical Society.
- ItemDigital DC blocker filters(Berlin : De Gruyter, 2021) Tittelbach-Helmrich, KlausThis paper mathematically investigates a special kind of digital infinite-impulse response (IIR) filters, suitable for filtering out very low frequencies near zero from digital signals. We investigate the transfer functions of such filters from 1st to 3rd order and provide formulas to calculate the filter coefficients from the desired cutoff frequency.
- ItemSynchronization in 5G networks: a hybrid Bayesian approach toward clock offset/skew estimation and its impact on localization(Heidelberg : Springer, 2021) Goodarzi, Meysam; Cvetkovski, Darko; Maletic, Nebojsa; Gutiérrez, Jesús; Grass, EckhardClock synchronization has always been a major challenge when designing wireless networks. This work focuses on tackling the time synchronization problem in 5G networks by adopting a hybrid Bayesian approach for clock offset and skew estimation. Furthermore, we provide an in-depth analysis of the impact of the proposed approach on a synchronization-sensitive service, i.e., localization. Specifically, we expose the substantial benefit of belief propagation (BP) running on factor graphs (FGs) in achieving precise network-wide synchronization. Moreover, we take advantage of Bayesian recursive filtering (BRF) to mitigate the time-stamping error in pairwise synchronization. Finally, we reveal the merit of hybrid synchronization by dividing a large-scale network into local synchronization domains and applying the most suitable synchronization algorithm (BP- or BRF-based) on each domain. The performance of the hybrid approach is then evaluated in terms of the root mean square errors (RMSEs) of the clock offset, clock skew, and the position estimation. According to the simulations, in spite of the simplifications in the hybrid approach, RMSEs of clock offset, clock skew, and position estimation remain below 10 ns, 1 ppm, and 1.5 m, respectively.
- ItemPhotonic contact thermometry using silicon ring resonators and tuneable laser-based spectroscopy(Berlin : De Gruyter, 2021) Eisermann, René; Krenek, Stephan; Winzer, Georg; Rudtsch, SteffenPhotonic sensors offer the possibility of purely optical measurement in contact thermometry. In this work, silicon-based ring resonators were used for this purpose. These can be manufactured with a high degree of reproducibility and uniformity due to the established semiconductor manufacturing process. For the precise characterisation of these photonic sensors, a measurement setup was developed which allows laser-based spectroscopy around 1550 nm and stable temperature control from 5 °C to 95 °C. This was characterised in detail and the resulting uncertainty influences of both the measuring set-up and the data processing were quantified. The determined temperature stability at 20 °C is better than 0.51 mK for the typical acquisition time of 10 s for a 100 nm spectrum. For a measurement of >24 h at 30 °C a standard deviation of 2.6 mK could be achieved. A hydrogen cyanide reference gas cell was used for traceable in-situ correction of the wavelength. The determined correction function has a typical uncertainty of 0.6 pm. The resonance peaks of the ring resonators showed a high optical quality of 157 000 in the average with a filter depth of up to 20 dB in the wavelength range from 1525 nm to 1565 nm. When comparing different methods for the determination of the central wavelength of the resonance peaks, an uncertainty of 0.3 pm could be identified. A temperature-dependent shift of the resonance peaks of approx. 72 pm/K was determined. This temperature sensitivity leads together with the analysed uncertainty contributions to a repeatability of better than 10 mK in the analysed temperature range from 10 °C to 90 °C.
- ItemPrediction of Pest Insect Appearance Using Sensors and Machine Learning(Basel : MDPI, 2021) Marković, Dušan; Vujičić, Dejan; Tanasković, Snežana; Đorđević, Borislav; Ranđić, Siniša; Stamenković, ZoranThe appearance of pest insects can lead to a loss in yield if farmers do not respond in a timely manner to suppress their spread. Occurrences and numbers of insects can be monitored through insect traps, which include their permanent touring and checking of their condition. Another more efficient way is to set up sensor devices with a camera at the traps that will photograph the traps and forward the images to the Internet, where the pest insect’s appearance will be predicted by image analysis. Weather conditions, temperature and relative humidity are the parameters that affect the appearance of some pests, such as Helicoverpa armigera. This paper presents a model of machine learning that can predict the appearance of insects during a season on a daily basis, taking into account the air temperature and relative humidity. Several machine learning algorithms for classification were applied and their accuracy for the prediction of insect occurrence was presented (up to 76.5%). Since the data used for testing were given in chronological order according to the days when the measurement was performed, the existing model was expanded to take into account the periods of three and five days. The extended method showed better accuracy of prediction and a lower percentage of false detections. In the case of a period of five days, the accuracy of the affected detections was 86.3%, while the percentage of false detections was 11%. The proposed model of machine learning can help farmers to detect the occurrence of pests and save the time and resources needed to check the fields.