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End date: 2021 × Start date: 2021 × Subject: Silicon × WGL Institute: IHP ×

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Now showing 1 - 3 of 3
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    Modulation Linearity Characterization of Si Ring Modulators
    (Washington, DC : OSA, 2021) Jo, Youngkwan; Mai, Christian; Lischke, Stefan; Zimmermann, Lars; Choi, Woo-Young
    Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
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    Si photonic-electronic monolithically integrated optical receiver with a built-in temperature-controlled wavelength filter
    (Washington, DC : Soc., 2021) Kim, Hyun-Kyu; Kim, Minkyu; Kim, Min-Hyeong; Jo, Youngkwan; Lischke, Stefan; Mai, Christian; Zimmermann, Lars; Choi, Woo-Young
    We present a Si photonic-electronic integrated ring-resonator based optical receiver that contains a temperature-controlled ring-resonator filter (RRF), a Ge photodetector, and receiver circuits in a single chip. The temperature controller automatically determines the RRF temperature at which the maximum transmission of the desired WDM signal is achieved and maintains this condition against any temperature or input wavelength fluctuation. This Si photonic-electronic integrated circuit is realized with 0.25-µm photonic BiCMOS technology, and its operation is successfully confirmed with measurement.
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    Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
    (New York, NY : IEEE, 2021) Kissinger, Dietmar; Kahmen, Gerhard; Weigel, Robert
    This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.