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Now showing 1 - 5 of 5
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    Plasma-based VAD process for multiply doped glass powders and high-performance fiber preforms with outstanding homogeneity
    (Hoboken, NJ : Wiley Interscience, 2020) Trautvetter, Tom; Schäfer, Jan; Benzine, Omar; Methling, Ralf; Baierl, Hardy; Reichel, Volker; Dellith, Jan; Köpp, Daniel; Hempel, Frank; Stankov, Marjan; Baeva, Margarita; Foest, Rüdiger; Wondraczek, Lothar; Wondraczek, Katrin; Bartelt, Hartmut
    An innovative approach using the vapor axial deposition (VAD), for the preparation of silica-based high-power fiber laser preforms, is described in this study. The VAD uses a plasma deposition system operating at atmospheric pressure, fed by a single, chemically adapted solution containing precursors of laser-active dopants (e.g., Yb2O3), glass-modifier species (e.g., Al2O3), and the silica matrix. The approach enables simultaneous doping with multiple optically active species and overcomes some of the current technological limitations encountered with well-established fiber preform technologies in terms of dopant distribution, doping levels, and achievable active core diameter. The deposition of co-doped silica with outstanding homogeneity is proven by Raman spectroscopy and electron probe microanalysis. Yb2O3 concentrations are realized up to 0.3 mol% in SiO2, with simultaneous doping of 3 mol% of Al2O3.
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    1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis
    (Weinheim : Wiley-VCH, 2021) Najafidehaghani, Emad; Gan, Ziyang; George, Antony; Lehnert, Tibor; Ngo, Gia Quyet; Neumann, Christof; Bucher, Tobias; Staude, Isabelle; Kaiser, David; Vogl, Tobias; Hübner, Uwe; Kaiser, Ute; Eilenberger, Falk; Turchanin, Andrey
    Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
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    Photodoping and Fast Charge Extraction in Ionic Carbon Nitride Photoanodes
    (Weinheim : Wiley-VCH, 2021) Adler, Christiane; Selim, Shababa; Krivtsov, Igor; Li, Chunyu; Mitoraj, Dariusz; Dietzek, Benjamin; Durrant, James R.; Beranek, Radim
    Ionic carbon nitrides based on poly(heptazine imides) (PHI) represent a vigorously studied class of materials with possible applications in photocatalysis and energy storage. Herein, for the first time, the photogenerated charge dynamics in highly stable and binder-free PHI photoanodes using in operando transient photocurrents and spectroelectrochemical photoinduced absorption measurements is studied. It is discovered that light-induced accumulation of long-lived trapped electrons within the PHI film leads to effective photodoping of the PHI film, resulting in a significant improvement of photocurrent response due to more efficient electron transport. While photodoping is previously reported for various semiconductors, it has not been shown before for carbon nitride materials. Furthermore, it is found that the extraction kinetics of untrapped electrons are remarkably fast in these PHI photoanodes, with electron extraction times (ms) comparable to those measured for commonly employed metal oxide semiconductors. These results shed light on the excellent performance of PHI photoanodes in alcohol photoreforming, including very negative photocurrent onset, outstanding fill factor, and the possibility to operate under zero-bias conditions. More generally, the here reported photodoping effect and fast electron extraction in PHI photoanodes establish a strong rationale for the use of PHI films in various applications, such as bias-free photoelectrochemistry or photobatteries. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
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    Merging Top-Down and Bottom-Up Approaches to Fabricate Artificial Photonic Nanomaterials with a Deterministic Electric and Magnetic Response
    (Weinheim : Wiley-VCH Verlag, 2020) Dietrich K.; Zilk M.; Steglich M.; Siefke T.; Hübner U.; Pertsch T.; Rockstuhl C.; Tünnermann A.; Kley E.-B.
    Artificial photonic nanomaterials made from densely packed scatterers are frequently realized either by top-down or bottom-up techniques. While top-down techniques offer unprecedented control over achievable geometries for the scatterers, by trend they suffer from being limited to planar and periodic structures. In contrast, materials fabricated with bottom-up techniques do not suffer from such disadvantages but, unfortunately, they offer only little control on achievable geometries for the scatterers. To overcome these limitations, a nanofabrication strategy is introduced that merges both approaches. A large number of scatterers are fabricated with a tailored optical response by fast character projection electron-beam lithography and are embedded into a membrane. By peeling-off this membrane from the substrate, scrambling, and densifying it, a bulk material comprising densely packed and randomly arranged scatterers is obtained. The fabrication of an isotropic material from these scatterers with a strong electric and magnetic response is demonstrated. The approach of this study unlocks novel opportunities to fabricate nanomaterials with a complex optical response in the bulk but also on top of arbitrarily shaped surfaces. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    Use of polymers as wavenumber calibration standards in deep-UVRR
    (Amsterdam [u.a.] : Elsevier Science, 2022) Pistiki, Aikaterini; Ryabchykov, Oleg; Bocklitz, Thomas W.; Rösch, Petra; Popp, Jürgen
    Deep-UV resonance Raman spectroscopy (UVRR) allows the classification of bacterial species with high accuracy and is a promising tool to be developed for clinical application. For this attempt, the optimization of the wavenumber calibration is required to correct the overtime changes of the Raman setup. In the present study, different polymers were investigated as potential calibration agents. The ones with many sharp bands within the spectral range 400–1900 cm−1 were selected and used for wavenumber calibration of bacterial spectra. Classification models were built using a training cross-validation dataset that was then evaluated with an independent test dataset obtained after 4 months. Without calibration, the training cross-validation dataset provided an accuracy for differentiation above 99 % that dropped to 51.2 % after test evaluation. Applying the test evaluation with PET and Teflon calibration allowed correct assignment of all spectra of Gram-positive isolates. Calibration with PS and PEI leads to misclassifications that could be overcome with majority voting. Concerning the very closely related and similar in genome and cell biochemistry Enterobacteriaceae species, all spectra of the training cross-validation dataset were correctly classified but were misclassified in test evaluation. These results show the importance of selecting the most suitable calibration agent in the classification of bacterial species and help in the optimization of the deep-UVRR technique.