9 results
Search Results
Now showing 1 - 9 of 9
- ItemEpitaxial growth of the first two members of the Ban +1InnO2.5 n +1Ruddlesden-Popper homologous series(New York, NY : American Institute of Physics, 2022) Hensling, Felix V. E.; Smeaton, Michelle A.; Show, Veronica; Azizie, Kathy; Barone, Matthew R.; Kourkoutis, Lena F.; Schlom, Darrell G.We demonstrate the epitaxial growth of the first two members, and the n = ∞ member of the homologous Ruddlesden-Popper series of Ba n + 1 In n O 2.5 n + 1 of which the n = 1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [In 2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO 2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy.
- ItemPerspectives on MOVPE-grown (100) β-Ga2O3thin films and its Al-alloy for power electronics application([Melville, NY] : American Institute of Physics, 2022) Rehm, Jana; Chou, Ta-Shun; Bin Anooz, Saud; Seyidov, Palvan; Fiedler, Andreas; Galazka, Zbigniew; Popp, AndreasBeta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present an overview and perspective on the development of MOVPE-grown (100) β-Ga2O3 thin films and its role in supplementing high-power electronics. We review the development path of the growth process on (100) β-Ga2O3 thin films with a discussion regarding the solved and remaining challenges. The structural defect formation mechanism, substrate treatment strategies, and different growth windows are analyzed to optimize the grown film to fulfill the requirements for device fabrication. Toward industrial applications, MOVPE-grown β-Ga2O3 thin films are evaluated in two aspects: thick layers with smooth surface roughness and the electrical properties in terms of high carrier mobility and low doping concentration. Based on the reviewed results, we propose strategies in substrate preparation treatments and supportive tools such as the machine learning approaches for future growth process optimization and envision the rising interest of the β-Ga2O3-related alloy, β-(AlxGa1-x)2O3.
- ItemSelf-stabilization of the equilibrium state in ferroelectric thin films(Amsterdam : Elsevier, 2022) Gaal, Peter; Schmidt, Daniel; Khosla, Mallika; Richter, Carsten; Boesecke, Peter; Novikov, Dmitri; Schmidbauer, Martin; Schwarzkopf, Jutta(K,Na)NbO3 is a lead-free and sustainable ferroelectric material with electromechanical parameters comparable to Pb(Zr,Ti)O3 (PZT) and other lead-based solid solutions. It is therefore a promising candidate for caloric cooling and energy harvesting applications. Specifically, the structural transition from the low-temperature Mc- to the high-temperature c-phase displays a rich hierarchical order of domains and superdomains, that forms at specific strain conditions. The relevant length scales are few tens of nanometers for the domain and few micrometers for the superdomain size, respectively. Phase-field calculations show that this hierarchical order adds to the total free energy of the solid. Thus, domains and their formation has a strong impact on the functional properties relevant for electrocaloric cooling or energy harvesting applications. However, monitoring the formation of domains and superdomains is difficult and requires both, high spatial and high temporal resolution of the experiment. Synchrotron-based time-resolved X-ray diffraction methods in combination with scanning imaging X-ray microscopy is applied to resolve the local dynamics of the domain morphology with sub-micrometer spatial and nanosecond temporal resolution. In this regime, the material displays a novel self-stabilization mechanism of the domain morphology, which may be a general property of first-order phase transitions.
- ItemCoherent control of electron spin qubits in silicon using a global field(London : Nature Publ. Group, 2022) Vahapoglu, E.; Slack-Smith, J.P.; Leon, R.C.C.; Lim, W.H.; Hudson, F.E.; Day, T.; Cifuentes, J.D.; Tanttu, T.; Yang, C. H.; Saraiva, A.; Abrosimov, N.V.; Pohl, H.J.; Thewalt, M.L.W.; Laucht, A.; Dzurak, A.S.; Pla, J.J.Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer.
- ItemSpectroscopy and 2.1 µm laser operation of Czochralski-grown Tm3+:YScO3 crystals(Washington, DC : Soc., 2022) Suzuki, Anna; Kalusniak, Sascha; Tanaka, Hiroki; Brützam, Mario; Ganschow, Steffen; Tokurakawa, Masaki; Kränkel, ChristianWe report on growth, temperature-dependent spectroscopy, and laser experiments of Tm3+-doped YScO3 mixed sesquioxide crystals. For the first time, cm3-scale laser quality Tm3+:YScO3 crystals with 2.2 at.% and 3.1 at.% doping levels were grown by the Czochralski method from iridium crucibles. We reveal that the structural disorder in the mixed crystals allows for broad and smooth spectral features even at cryogenic temperatures. We obtained the first continuous wave laser operation in this material at wavelengths around 2100 nm using a laser diode emitting at 780 nm as a pump source. A maximum slope efficiency of 45% was achieved using a Tm3 + (3.1 at.%):YScO3 crystal. Our findings demonstrate the high potential of Tm3+-doped mixed sesquioxides for efficient ultrafast pulse generation in the 2.1 µm range.
- ItemLaser cooling in Yb:KY3F10: a comparison with Yb:YLF(Washington, DC : Optica, 2022) Püschel, Stefan; Mauerhoff, Felix; Kränkel, Christian; Tanaka, HirokiLaser cooling by anti-Stokes fluorescence is a technology to realize all-solid-state optical cryocoolers. We grew Yb3+-doped KY3F10 (Yb:KYF) crystals as novel laser cooling media and compare their cooling performance to Yb3+-doped LiYF4 (Yb:YLF) crystals also grown in our institute. We present temperature-dependent absorption and emission cross sections as well as the fluorescence lifetime of Yb:KYF, and calculate its material figure-of-merit for laser cooling. Yb:KYF exhibits a higher figure-of-merit than Yb:YLF at temperatures below 200 K. This is because, in contrast to Yb:YLF, the excitation transition from the second-highest Stark level of the ground state is best-suited for cryogenic cooling in Yb:KYF. Thus, it has the potential to achieve unprecedentedly low temperatures below the boiling point of liquid nitrogen. In this work, we observe the first laser cooling of Yb:KYF, and obtain a background absorption coefficient of ∼10−4 cm−1, which is among the lowest ever reported for Yb3+-doped fluoride crystals. A simple model calculation predicts that our Yb:KYF and Yb:YLF crystals can potentially be cooled down to ≈100 K in a high-power cooling setup. Our Yb:KYF crystals still leave room for further improvement through the optimization of the growth process and the use of purer raw materials.
- ItemHeading for brighter and faster β-Ga2O3 scintillator crystals(Amsterdam : Elsevier, 2022) Drozdowski, Winicjusz; Makowski, Michał; Bachiri, Abdellah; Witkowski, Marcin E.; Wojtowicz, Andrzej J.; Swiderski, Lukasz; Irmscher, Klaus; Schewski, Robert; Galazka, ZbigniewCzochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV.
- ItemLow temperature thermoluminescence of β-Ga2O3 scintillator(Amsterdam : Elsevier, 2022) Witkowski, Marcin E.; Drozdowski, Konrad J.; Makowski, Michał; Drozdowski, Winicjusz; Wojtowicz, Andrzej J.; Irmscher, Klaus; Schewski, Robert; Galazka, ZbigniewLow temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping.
- ItemQuasi-monocrystalline silicon for low-noise end mirrors in cryogenic gravitational-wave detectors(College Park, MD : APS, 2022) Kiessling, Frank M.; Murray, Peter G.; Kinley-Hanlon, Maya; Buchovska, Iryna; Ervik, Torunn K.; Graham, Victoria; Hough, Jim; Johnston, Ross; Pietsch, Mike; Rowan, Sheila; Schnabel, Roman; Tait, Simon C.; Steinlechner, Jessica; Martin, Iain W.Mirrors made of silicon have been proposed for use in future cryogenic gravitational-wave detectors, which will be significantly more sensitive than current room-temperature detectors. These mirrors are planned to have diameters of ≈50 cm and a mass of ≈200 kg. While single-crystalline float-zone silicon meets the requirements of low optical absorption and low mechanical loss, the production of this type of material is restricted to sizes much smaller than required. Here we present studies of silicon produced by directional solidification. This material can be grown as quasi-monocrystalline ingots in sizes larger than currently required. We present measurements of a low room-temperature and cryogenic mechanical loss comparable with float-zone silicon. While the optical absorption of our test sample is significantly higher than required, the low mechanical loss motivates research into further absorption reduction in the future. While it is unclear if material pure enough for the transmissive detector input mirrors can be achieved, an absorption level suitable for the highly reflective coated end mirrors seems realistic. Together with the potential to produce samples much larger than ≈50 cm, this material may be of great benefit for realizing silicon-based gravitational-wave detectors.