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End date: 2023 × Start date: 2020 × Has files: Yes × Subject: Single crystals × WGL Institute: IKZ ×

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Now showing 1 - 3 of 3
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    Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
    (New York, NY : American Inst. of Physics, 2020) Boy, Johannes; Handwerg, Martin; Mitdank, Rüdiger; Galazka, Zbigniew; Fischer, Saskia F.
    The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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    Sub-6 optical-cycle Kerr-lens mode-locked Tm:Lu2O3 and Tm:Sc2O3 combined gain media laser at 2.1 μm
    (Washington, DC : Soc., 2021) Suzuki, Anna; Kränkel, Christian; Tokurakawa, Masaki
    We present a combined gain media Kerr-lens mode-locked laser based on a Tm:Lu2O3 ceramic and a Tm:Sc2O3 single crystal. Pulses as short as 41 fs, corresponding to less than 6 optical cycles, were obtained with an average output power of 42 mW at a wavelength of 2.1 μm and a repetition rate of 93.3 MHz. Furthermore, a maximum average power of 316 mW with a pulse duration of 73 fs was achieved.
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    Recent progress in the development of β-Ga2O3 scintillator crystals grown by the Czochralski method
    (Washington, DC : OSA, 2021) Drozdowski, Winicjusz; Makowski, Michał; Witkowski, Marcin E.; Wojtowicz, Andrzej J.; Irmscher, Klaus; Schewski, Robert; Galazka, Zbigniew
    A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators.