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- ItemStrain Engineered Electrically Pumped SiGeSn Microring Lasers on Si(Washington, DC : ACS, 2022) Marzban, Bahareh; Seidel, Lukas; Liu, Teren; Wu, Kui; Kiyek, Vivien; Zoellner, Marvin Hartwig; Ikonic, Zoran; Schulze, Joerg; Grützmacher, Detlev; Capellini, Giovanni; Oehme, Michael; Witzens, Jeremy; Buca, DanSiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
- ItemEnhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier(Melville, NY : American Inst. of Physics, 2020) Piros, Eszter; Petzold, Stefan; Zintler, Alexander; Kaiser, Nico; Vogel, Tobias; Eilhardt, Robert; Wenger, Christian; Molina-Luna, Leopoldo; Alff, LambertThis work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena. © 2020 Author(s).
- ItemA comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)(Melville, NY : American Inst. of Physics, 2020) Sinterhauf, Anna; Bode, Simeon; Auge, Manuel; Lukosius, Mindaugas; Lippert, Gunther; Hofsäss, Hans-Christian; Wenderoth, MartinWe investigate the electronic transport properties of Au-contacted graphene on Ge/Si(001). Kelvin probe force microscopy at room temperature with an additionally applied electric transport field is used to gain a comprehensive understanding of macroscopic transport measurements. In particular, we analyze the contact pads including the transition region, perform local transport measurements in pristine graphene/Germanium, and explore the role of the semiconducting Germanium substrate. We connect the results from these local scale measurements with the macroscopic performance of the device. We find that a graphene sheet on a 2 μm Ge film carries approximately 10% of the current flowing through the device. Moreover, we show that an electronic transition region forms directly adjacent to the contact pads. This transition region is characterized by a width of >100 μm and a strongly increased sheet resistance acting as the bottleneck for charge transport. Based on Rutherford backscattering of the contact pads, we suggest that the formation of this transition region is caused by diffusion. © 2020 Author(s).
- ItemModulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers(Basel : MDPI, 2022) Kalishettyhalli Mahadevaiah, Mamathamba; Perez, Eduardo; Lisker, Marco; Schubert, Markus Andreas; Perez-Bosch Quesada, Emilio; Wenger, Christian; Mai, AndreasThe resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2 O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.
- ItemA 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links(Lausanne : Frontiers Media, 2021) Giannakopoulos, Stavros; Sourikopoulos, Ilias; Stampoulidis, Leontios; Ostrovskyy, Pylyp; Teply, Florian; Tittelbach-Helmrich, K.; Panic, Goran; Fischer, Gunter; Grabowski, Alexander; Zirath, Herbert; Ayzac, Philippe; Venet, Norbert; Maho, Anaëlle; Sotom, Michel; Jones, Shaun; Wood, Grahame; Oxtoby, IanWe report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.
- ItemNon-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications(London : Springer Nature, 2021) Aktas, Ozan; Yamamoto, Yuji; Kaynak, Mehmet; Peacock, Anna C.Advanced solid-state devices, including lasers and modulators, require semiconductor heterostructures for nanoscale engineering of the electronic bandgap and refractive index. However, existing epitaxial growth methods are limited to fabrication of vertical heterostructures grown layer by layer. Here, we report the use of finite-element-method-based phase-field modelling with thermocapillary convection to investigate laser inscription of in-plane heterostructures within silicon-germanium films. The modelling is supported by experimental work using epitaxially-grown Si0.5Ge0.5 layers. The phase-field simulations reveal that various in-plane heterostructures with single or periodic interfaces can be fabricated by controlling phase segregation through modulation of the scan speed, power, and beam position. Optical simulations are used to demonstrate the potential for two devices: graded-index waveguides with Ge-rich (>70%) cores, and waveguide Bragg gratings with nanoscale periods (100–500 nm). Periodic heterostructure formation via sub-millisecond modulation of the laser parameters opens a route for post-growth fabrication of in-plane quantum wells and superlattices in semiconductor alloy films.
- ItemCMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes(Washington, DC : ACS Publications, 2021) Talamas Simola, Enrico; Kiyek, Vivien; Ballabio, Andrea; Schlykow, Viktoria; Frigerio, Jacopo; Zucchetti, Carlo; De Iacovo, Andrea; Colace, Lorenzo; Yamamoto, Yuji; Capellini, Giovanni; Grützmacher, Detlev; Buca, Dan; Isella, GiovanniInfrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis, demonstrated by identifying the wavelength of a monochromatic beam. © 2021 The Authors. Published by American Chemical Society.
- ItemToward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems(Basel : MDPI AG, 2021) Perez-Bosch Quesada, Emilio; Romero-Zaliz, Rocio; Perez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Reuben, John; Schubert, Markus Andreas; Jimenez-Molinos, Francisco; Roldan, Juan Bautista; Wenger, ChristianIn this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.
- ItemModulation Linearity Characterization of Si Ring Modulators(Washington, DC : OSA, 2021) Jo, Youngkwan; Mai, Christian; Lischke, Stefan; Zimmermann, Lars; Choi, Woo-YoungModulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
- ItemDesign and performance analysis of integrated focusing grating couplers for the transverse-magnetic TM00 mode in a photonic BiCMOS technology(London : Biomed Central, 2020) Georgieva, Galina; Voigt, Karsten; Peczek, Anna; Mai, Christian; Zimmermann, LarsFocusing grating couplers for the excitation of the fundamental transverse-magnetic (TM) mode in integrated silicon photonic waveguides are designed and characterized under the boundary conditions of a photonic BiCMOS foundry. Two types of waveguide geometries are considered – a nanowire and a rib waveguide. Wafer-scale experimental results for nanowire TM grating couplers are in excellent agreement with numerical investigations and demonstrate a robust behavior on the wafer. The mean coupling loss and the 3s interval are -3.9 ± 0.3 dB. The on wafer variation is three times lower than for the fundamental transverse-electric (TE) polarization. Similarly, the coupling in rib waveguides is examined as well. The results indicate that the rib waveguides require a modified geometry when designed for TM. In general, the nanowire waveguide type is more suitable for TM coupling, showing a stable and repeatable performance. © 2020, The Author(s).