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- ItemCalibration of the GERDA experiment(Berlin ; Heidelberg : Springer, 2021) Agostini, M.; Araujo, G.; Bakalyarov, A.M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Bettini, A.; Bezrukov, L.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zatschler, B.; Zhitnikov, I.; Zhukov, S.V.; Zinatulina, D.; Zschocke, A.; Zsigmond, A.J.; Zuber, K.; Biancacci, V.; Zuzel, G.; Bossio, E.; Bothe, V.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Comellato, T.; D'Andrea, V.; Demidova, E.V.; Marco, N.D.; Doroshkevich, E.; Fischer, F.; Fomina, M.; Gangapshev, A.; Garfagnini, A.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakenmüller, J.; Hemmer, S.; Hiller, R.; Hofmann, W.; Huang, J.; Hult, M.; Inzhechik, L.V.; Csáthy, J. Janicskó; Jochum, J.; Junker, M.; Kazalov, V.; Kermaïdic, Y.; Khushbakht, H.; Kihm, T.; Kirpichnikov, I.V.; Klimenko, A.; Kneißl, R.; Knöpfle, K.T.; Kochetov, O.; Kornoukhov, V.N.; Krause, P.; Kuzminov, V.V.; Laubenstein, M.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Manzanillas, L.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Müller, Y.; Nemchenok, I.; Pandola, L.; Pelczar, K.; Pertoldi, L.; Piseri, P.; Pullia, A.; Ransom, C.; Rauscher, L.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Schönert, S.; Schreiner, J.; Schütt, M.; Schütz, A.-K.; Schulz, O.; Schwarz, M.; Schwingenheuer, B.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Shtembari, L.; Simgen, H.; Smolnikov, A.; Stukov, D.; Vasenko, A.A.; Veresnikova, A.; Vignoli, C.; von Sturm, K.; Wester, T.The GERmanium Detector Array (Gerda) collaboration searched for neutrinoless double-β decay in 76Ge with an array of about 40 high-purity isotopically-enriched germanium detectors. The experimental signature of the decay is a monoenergetic signal at Qββ =2039.061(7) keV in the measured summed energy spectrum of the two emitted electrons. Both the energy reconstruction and resolution of the germanium detectors are crucial to separate a potential signal from various backgrounds, such as neutrino-accompanied double-β decays allowed by the Standard Model. The energy resolution and stability were determined and monitored as a function of time using data from regular 228Th calibrations. In this work, we describe the calibration process and associated data analysis of the full Gerda dataset, tailored to preserve the excellent resolution of the individual germanium detectors when combining data over several years.
- ItemCharacterization of inverted coaxial 76 Ge detectors in GERDA for future double- β decay experiments(Berlin ; Heidelberg : Springer, 2021) Agostini, M.; Araujo, G.; Bakalyarov, A.M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Bettini, A.; Bezrukov, L.; Wojcik, M.; Yanovich, E.; Zatschler, B.; Zhitnikov, I.; Zhukov, S.V.; Zinatulina, D.; Zschocke, A.; Zsigmond, A.J.; Zuber, K.; Zuzel, G.; Biancacci, V.; Bossio, E.; Bothe, V.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Comellato, T.; D'Andrea, V.; Demidova, E.V.; Marco, N.D.; Doroshkevich, E.; Fischer, F.; Fomina, M.; Gangapshev, A.; Garfagnini, A.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakenmüller, J.; Hemmer, S.; Hofmann, W.; Huang, J.; Hult, M.; Inzhechik, L.V.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kermaïdic, Y.; Khushbakht, H.; Kihm, T.; Kirpichnikov, I.V.; Klimenko, A.; Kneißl, R.; Knöpfle, K.T.; Kochetov, O.; Kornoukhov, V.N.; Krause, P.; Kuzminov, V.V.; Laubenstein, M.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Manzanillas, L.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Müller, Y.; Nemchenok, I.; Pandola, L.; Pelczar, K.; Pertoldi, L.; Piseri, P.; Pullia, A.; Ransom, C.; Rauscher, L.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Schönert, S.; Schreiner, J.; Schütt, M.; Schütz, A.-K.; Schulz, O.; Schwarz, M.; Schwingenheuer, B.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Shtembari, L.; Simgen, H.; Smolnikov, A.; Stukov, D.; Vasenko, A.A.; Veresnikova, A.; Vignoli, C.; von Sturm, K.; Wester, T.; Wiesinger, C.Neutrinoless double-β decay of 76Ge is searched for with germanium detectors where source and detector of the decay are identical. For the success of future experiments it is important to increase the mass of the detectors. We report here on the characterization and testing of five prototype detectors manufactured in inverted coaxial (IC) geometry from material enriched to 88% in 76Ge. IC detectors combine the large mass of the traditional semi-coaxial Ge detectors with the superior resolution and pulse shape discrimination power of point contact detectors which exhibited so far much lower mass. Their performance has been found to be satisfactory both when operated in vacuum cryostat and bare in liquid argon within the Gerda setup. The measured resolutions at the Q-value for double-β decay of 76Ge (Qββ = 2039 keV) are about 2.1 keV full width at half maximum in vacuum cryostat. After 18 months of operation within the ultra-low background environment of the GERmanium Detector Array (Gerda) experiment and an accumulated exposure of 8.5 kg⋅year, the background index after analysis cuts is measured to be 4.9+7.3−3.4×10−4 counts/(keV⋅kg⋅year) around Qββ. This work confirms the feasibility of IC detectors for the next-generation experiment Legend.
- ItemSingle-crystal neutron and X-ray diffraction study of garnet-type solid-state electrolyte Li6La3ZrTaO12: An in situ temperature-dependence investigation (2.5 ≤ T ≤ 873 K)(Oxford [u.a.] : Wiley-Blackwell, 2021) Redhammer, Günther J.; Meven, Martin; Ganschow, Steffen; Tippelt, Gerold; Rettenwander, DanielLarge single crystals of garnet-type Li6La3ZrTaO12 (LLZTO) were grown by the Czochralski method and analysed using neutron diffraction between 2.5 and 873 K in order to fully characterize the Li atom distribution, and possible Li ion mobility in this class of potential candidates for solid-state electrolyte battery material. LLZTO retains its cubic symmetry (space group Ia 3 d) over the complete temperature range. When compared to other sites, the octahedral sites behave as the most rigid unit and show the smallest increase in atomic displacement parameters and bond length. The La and Li sites show similar thermal expansion in their bond lengths with temperature, and the anisotropic and equivalent atomic displacement parameters exhibit a distinctly larger increase at temperatures above 400 K. Detailed inspection of nuclear densities at the Li1 site reveal a small but significant displacement from the 24d position to the typical 96h position, which cannot, however, be resolved from the single-crystal X-ray diffraction data. The site occupation of LiI ions on Li1 and Li2 sites remains constant, so there is no change in site occupation with temperature. © 2021 International Union of Crystallography. All rights reserved.
- ItemReciprocal space slicing: A time-efficient approach to femtosecond x-ray diffraction(Melville, NY : AIP Publishing LLC, 2021) Zeuschner, S.P.; Mattern, M.; Pudell, J.-E.; von Reppert, A.; Rössle, M.; Leitenberger, W.; Schwarzkopf, J.; Boschker, J.E.; Herzog, M.; Bargheer, M.An experimental technique that allows faster assessment of out-of-plane strain dynamics of thin film heterostructures via x-ray diffraction is presented. In contrast to conventional high-speed reciprocal space-mapping setups, our approach reduces the measurement time drastically due to a fixed measurement geometry with a position-sensitive detector. This means that neither the incident (ω) nor the exit ( 2θ ) diffraction angle is scanned during the strain assessment via x-ray diffraction. Shifts of diffraction peaks on the fixed x-ray area detector originate from an out-of-plane strain within the sample. Quantitative strain assessment requires the determination of a factor relating the observed shift to the change in the reciprocal lattice vector. The factor depends only on the widths of the peak along certain directions in reciprocal space, the diffraction angle of the studied reflection, and the resolution of the instrumental setup. We provide a full theoretical explanation and exemplify the concept with picosecond strain dynamics of a thin layer of NbO2.
- ItemCzochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu2O3-Sc2O3-Y2O3(Oxford [u.a.] : Wiley-Blackwell, 2021) Kränkel, Christian; Uvarova, Anastasia; Haurat, Émile; Hülshoff, Lena; Brützam, Mario; Guguschev, Christo; Kalusniaka, Sascha; Klimm, DetlefCubic rare-earth sesquioxide crystals are strongly demanded host materials for high power lasers, but due to their high melting points investigations on their thermodynamics and the growth of large-size crystals of high optical quality remain a challenge. Detailed thermal investigations of the ternary system Lu2O3-Sc2O3-Y2O3 revealing a large range of compositions with melting temperatures below 2200°C and a minimum of 2053°C for the composition (Sc0.45Y0.55)2O3 are presented. These reduced temperatures enable for the first time the growth of high optical quality mixed sesquioxide crystals with disordered structure by the conventional Czochralski method from iridium crucibles. An (Er0.07Sc0.50Y0.43)2O3 crystal is successfully grown and characterized with respect to its crystallographic properties as well as its composition, thermal conductivity and optical absorption in the 1μm range. © 2021 International Union of Crystallography. All rights reserved.
- ItemRevealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning(Amsterdam : Elsevier, 2021) Ernst, Owen C.; Uebel, David; Kayser, Stefan; Lange, Felix; Teubner, Thomas; Boeck, TorstenDewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
- ItemHigh-temperature annealing of AlN films grown on 4H-SiC(New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).
- ItemCharge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals(New York, NY : American Inst. of Physics, 2020) Boy, Johannes; Handwerg, Martin; Mitdank, Rüdiger; Galazka, Zbigniew; Fischer, Saskia F.The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
- ItemPerspectives on MOVPE-grown (100) β-Ga2O3thin films and its Al-alloy for power electronics application([Melville, NY] : American Institute of Physics, 2022) Rehm, Jana; Chou, Ta-Shun; Bin Anooz, Saud; Seyidov, Palvan; Fiedler, Andreas; Galazka, Zbigniew; Popp, AndreasBeta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present an overview and perspective on the development of MOVPE-grown (100) β-Ga2O3 thin films and its role in supplementing high-power electronics. We review the development path of the growth process on (100) β-Ga2O3 thin films with a discussion regarding the solved and remaining challenges. The structural defect formation mechanism, substrate treatment strategies, and different growth windows are analyzed to optimize the grown film to fulfill the requirements for device fabrication. Toward industrial applications, MOVPE-grown β-Ga2O3 thin films are evaluated in two aspects: thick layers with smooth surface roughness and the electrical properties in terms of high carrier mobility and low doping concentration. Based on the reviewed results, we propose strategies in substrate preparation treatments and supportive tools such as the machine learning approaches for future growth process optimization and envision the rising interest of the β-Ga2O3-related alloy, β-(AlxGa1-x)2O3.
- ItemSuppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device application(Melville, NY : American Inst. of Physics, 2023) Chou, Ta-Shun; Seyidov, Palvan; Bin Anooz, Saud; Grüneberg, Raimund; Pietsch, Mike; Rehm, Jana; Tran, Thi Thuy Vi; Tetzner, Kornelius; Galazka, Zbigniew; Albrecht, Martin; Irmscher, Klaus; Fiedler, Andreas; Popp, AndreasThis work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 μm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm2 V-1 s-1 (2.2 μm) and 163 cm2 V-1 s-1 (3 μm) at room temperature were measured for (100) β-Ga2O3 films with carrier concentrations of 5.7 × 1016 and 7.1 × 1016 cm-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 1015 cm-3.