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- ItemStrain Engineered Electrically Pumped SiGeSn Microring Lasers on Si(Washington, DC : ACS, 2022) Marzban, Bahareh; Seidel, Lukas; Liu, Teren; Wu, Kui; Kiyek, Vivien; Zoellner, Marvin Hartwig; Ikonic, Zoran; Schulze, Joerg; Grützmacher, Detlev; Capellini, Giovanni; Oehme, Michael; Witzens, Jeremy; Buca, DanSiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
- ItemNonlinear Optical Characterization of CsPbBr3 Nanocrystals as a Novel Material for the Integration into Electro-Optic Modulators(Millersville, PA : Materials Research Forum LLC, 2020) Vitale, Francesco; De Matteis, Fabio; Casalboni, Mauro; Prosposito, Paolo; Steglich, Patrick; Ksianzou, Viachaslau; Breiler, Christian; Schrader, Sigurd; Paci, Barbara; Generosi, Amanda; Prosposito, PaoloThe present work is concerned with the investigation of the nonlinear optical response of green emissive CsPbBr3 nanocrystals, in the form of colloidal dispersions in toluene, synthesized via a room-temperature ligand-assisted supersaturation recrystallization (LASR) method. After carrying out a preliminary characterization via X-Ray Diffraction (XRD) and Absorption and Photoluminescence (PL) Spectroscopies, the optical nonlinearity of the as-obtained colloids is probed by means of a single-beam Z-scan setup. Results show that the material in question, within the sensitivity of the experimental apparatus, exhibits a nonlinear refractive index n2 that is the order of 10-15 cm2/W. Moreover, a three-photon absorption mechanism (3PA) is postulated, according to the fitting of the recorded Z-scan traces and the fundamental absorption threshold, which turns out to be off resonance with twice the energy of the laser radiation. A figure of merit is, then, calculated as an indicator of the quality of the CsPbBr3 nanocrystals as a candidate material for photonic devices, for instance, Kerr-like electro-optic modulators (EOMs).
- ItemDielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics(Basel : MDPI AG, 2020) Ettehad, Honeyeh Matbaechi; Soltani Zarrin, Pouya; Hölzel, Ralph; Wenger, ChristianThis paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.
- ItemPS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients(Amsterdam [u.a.] : Elsevier, 2022) Andjelkovic, Marko; Marjanovic, Milos; Chen, Junchao; Ilic, Stefan; Ristic, Goran; Krstic, MilosThe bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.
- ItemModulation Linearity Characterization of Si Ring Modulators(Washington, DC : OSA, 2021) Jo, Youngkwan; Mai, Christian; Lischke, Stefan; Zimmermann, Lars; Choi, Woo-YoungModulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
- ItemNovel Functionalities of Smart Home Devices for the Elastic Energy Management Algorithm(Basel : MDPI, 2022) Powroźnik, Piotr; Szcześniak, Paweł; Sobolewski, Łukasz; Piotrowski, KrzysztofEnergy management in power systems is influenced by such factors as economic and ecological aspects. Increasing the use of electricity produced at a given time from renewable energy sources (RES) by employing the elastic energy management algorithm will allow for an increase in “green energy“ in the energy sector. At the same time, it can reduce the production of electricity from fossil fuels, which is a positive economic aspect. In addition, it will reduce the volume of energy from RES that have to be stored using expensive energy storage or sent to other parts of the grid. The model parameters proposed in the elastic energy management algorithm are discussed. In particular, attention is paid to the time shift, which allows for the acceleration or the delay in the start-up of smart appliances. The actions taken by the algorithm are aimed at maintaining a compromise between the user’s comfort and the requirements of distribution network operators. Establishing the value of the time shift parameter is based on GMDH neural networks and the regression method. In the simulation studies, the extension of selected activities related to the tasks performed in households and its impact on the user’s comfort as well as the response to the increased generation of energy from renewable energy sources have been verified by the simulation research presented in this article. The widespread use of the new functionalities of smart appliance devices together with the elastic energy management algorithm is planned for the future. Such a combination of hardware and software will enable more effective energy management in smart grids, which will be part of national power systems.
- ItemHigh-resolution net load forecasting for micro-neighbourhoods with high penetration of renewable energy sources(Amsterdam [u.a.] : Elsevier Science, 2020) Kobylinski, P.; Wierzbowski, M.; Piotrowski, K.Though extensive, the literature on electrical load forecasting lacks reports on studies focused on existing residential micro-neighbourhoods comprising small numbers of single-family houses equipped with solar panels. This paper provides a full description of an ANN-based model designed to predict short-term high-resolution (15-min intervals) micro-scale residential net load profiles. Since it seems especially relevant due to the specificity of local autocorrelations in load signal, in this paper we put stress on the systematic approach to feature selection in the context of lagged signal. We performed a case study of a real micro-neighbourhood comprising only 75 single-family houses. The obtained average prediction error was equivalent to 5.4 per cent of the maximal measured net load. The issues, i.e.: (1) the feasibility of micro-scale residential load forecasting taking into account renewable energy penetration, (2) the feasibility to predict net load with dense temporal resolution of 15 min, (3) the feature selection problem, (4) the proposed prosumption- and comparison-oriented prediction model key performance measure, could be of interest to engineers designing energy balancing systems for local smart grids. © 2019 The Authors
- Item240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology(New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, DietmarThis article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
- ItemLateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication(Pennington, NJ : ECS, 2023) Anand, K.; Schubert, M.A.; Corley-Wiciak, A.A.; Spirito, D.; Corley-Wiciak, C.; Klesse, W.M.; Mai, A.; Tillack, B.; Yamamoto, Y.Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.
- ItemMillimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies(New York, NY : IEEE, 2021) Kissinger, Dietmar; Kahmen, Gerhard; Weigel, RobertThis invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.
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