12 results
Search Results
Now showing 1 - 10 of 12
- ItemElectron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors(Washington, DC : ACS Publications, 2020) Belete, Melkamu; Engström, Olof; Vaziri, Sam; Lippert, Gunther; Lukosius, Mindaugas; Kataria, Satender; Lemme, Max C.Heterostructures comprising silicon, molybdenum disulfide (MoS2), and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature-dependent asymmetric current, indicating thermally activated charge carrier transport. The data are compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS2 is linearly temperature-dependent for T = 200-300 K with a positive temperature coefficient. The temperature dependence may be attributed to a change in band gap difference between Si and MoS2, strain at the Si/MoS2 interface, or different electron effective masses in Si and MoS2, leading to a possible entropy change stemming from variation in density of states as electrons move from Si to MoS2. The low barrier formed between Si and MoS2 and the resultant thermionic emission demonstrated here make the present devices potential candidates as the emitter diode of graphene base hot electron transistors for future high-speed electronics. Copyright © 2020 American Chemical Society.
- ItemInterfacial Covalent Bonds Regulated Electron-Deficient 2D Black Phosphorus for Electrocatalytic Oxygen Reactions(Weinheim : Wiley-VCH, 2021) Wang, Xia; Raghupathy, Ramya Kormath Madam; Querebillo, Christine Joy; Liao, Zhongquan; Li, Dongqi; Lin, Kui; Hantusch, Martin; Sofer, Zdeněk; Li, Baohua; Zschech, Ehrenfried; Weidinger, Inez M.; Kühne, Thomas D.; Mirhosseini, Hossein; Yu, Minghao; Feng, XinliangDeveloping resource-abundant and sustainable metal-free bifunctional oxygen electrocatalysts is essential for the practical application of zinc–air batteries (ZABs). 2D black phosphorus (BP) with fully exposed atoms and active lone pair electrons can be promising for oxygen electrocatalysts, which, however, suffers from low catalytic activity and poor electrochemical stability. Herein, guided by density functional theory (DFT) calculations, an efficient metal-free electrocatalyst is demonstrated via covalently bonding BP nanosheets with graphitic carbon nitride (denoted BP-CN-c). The polarized P-N covalent bonds in BP-CN-c can efficiently regulate the electron transfer from BP to graphitic carbon nitride and significantly promote the OOH* adsorption on phosphorus atoms. Impressively, the oxygen evolution reaction performance of BP-CN-c (overpotential of 350 mV at 10 mA cm−2, 90% retention after 10 h operation) represents the state-of-the-art among the reported BP-based metal-free catalysts. Additionally, BP-CN-c exhibits a small half-wave overpotential of 390 mV for oxygen reduction reaction, representing the first bifunctional BP-based metal-free oxygen catalyst. Moreover, ZABs are assembled incorporating BP-CN-c cathodes, delivering a substantially higher peak power density (168.3 mW cm−2) than the Pt/C+RuO2-based ZABs (101.3 mW cm−2). The acquired insights into interfacial covalent bonds pave the way for the rational design of new and affordable metal-free catalysts. © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH
- ItemThiophene-Bridged Donor–Acceptor sp2-Carbon-Linked 2D Conjugated Polymers as Photocathodes for Water Reduction(Weinheim : Wiley-VCH, 2021) Xu, Shunqi; Sun, Hanjun; Addicoat, Matthew; Biswal, Bishnu P.; He, Fan; Park, SangWook; Paasch, Silvia; Zhang, Tao; Sheng, Wenbo; Brunner, Eike; Hou, Yang; Richter, Marcus; Feng, XinliangPhotoelectrochemical (PEC) water reduction, converting solar energy into environmentally friendly hydrogen fuel, requires delicate design and synthesis of semiconductors with appropriate bandgaps, suitable energy levels of the frontier orbitals, and high intrinsic charge mobility. In this work, the synthesis of a novel bithiophene-bridged donor–acceptor-based 2D sp2-carbon-linked conjugated polymer (2D CCP) is demonstrated. The Knoevenagel polymerization between the electron-accepting building block 2,3,8,9,14,15-hexa(4-formylphenyl) diquinoxalino[2,3-a:2′,3′-c]phenazine (HATN-6CHO) and the first electron-donating linker 2,2′-([2,2′-bithiophene]-5,5′-diyl)diacetonitrile (ThDAN) provides the 2D CCP-HATNThDAN (2D CCP-Th). Compared with the corresponding biphenyl-bridged 2D CCP-HATN-BDAN (2D CCP-BD), the bithiophene-based 2D CCP-Th exhibits a wide light-harvesting range (up to 674 nm), a optical energy gap (2.04 eV), and highest energy occupied molecular orbital–lowest unoccupied molecular orbital distributions for facilitated charge transfer, which make 2D CCP-Th a promising candidate for PEC water reduction. As a result, 2D CCP-Th presents a superb H2-evolution photocurrent density up to ≈7.9 µA cm−2 at 0 V versus reversible hydrogen electrode, which is superior to the reported 2D covalent organic frameworks and most carbon nitride materials (0.09–6.0 µA cm−2). Density functional theory calculations identify the thiophene units and cyano substituents at the vinylene linkage as active sites for the evolution of H2. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
- ItemFlexible MXene films for batteries and beyond(Hoboken, NJ : Wiley, 2022) Huang, Yang; Lu, Qiongqiong; Wu, Dianlun; Jiang, Yue; Liu, Zhenjie; Chen, Bin; Zhu, Minshen; Schmidt, Oliver G.MXenes add dozens of metallic conductors to the family of two-dimensional (2D) materials. A top-down synthesis approach removing A-layer atoms (e.g., Al, Si, and Ga) in MAX phases to produce 2D flakes attaches various surface terminations to MXenes. With these terminations, MXenes show tunable properties, promising a range of applications from energy storage devices to electronics, including sensors, transistors, and antennas. MXenes are also excellent building blocks to create flexible films used for flexible and wearable devices. This article summarizes the synthesis of MXene flakes and highlights aspects that need attention for flexible devices. Rather than listing the development of energy storage devices in detail, we focus on the main challenges of and solutions for constructing high-performance devices. Moreover, we show the applications of MXene films in electronics to call on designs to construct a complete system based on MXene with good flexibility, which consists of a power source, sensors, transistors, and wireless communications.
- ItemSonication-assisted liquid phase exfoliation of two-dimensional CrTe3 under inert conditions(Amsterdam [u.a.] : Elsevier Science, 2023) Synnatschke, Kevin; Moses Badlyan, Narine; Wrzesińska, Angelika; Lozano Onrubia, Guillermo; Hansen, Anna–Lena; Wolff, Stefan; Tornatzky, Hans; Bensch, Wolfgang; Vaynzof, Yana; Maultzsch, Janina; Backes, ClaudiaLiquid phase exfoliation (LPE) has been used for the successful fabrication of nanosheets from a large number of van der Waals materials. While this allows to study fundamental changes of material properties’ associated with reduced dimensions, it also changes the chemistry of many materials due to a significant increase of the effective surface area, often accompanied with enhanced reactivity and accelerated oxidation. To prevent material decomposition, LPE and processing in inert atmosphere have been developed, which enables the preparation of pristine nanomaterials, and to systematically study compositional changes over time for different storage conditions. Here, we demonstrate the inert exfoliation of the oxidation-sensitive van der Waals crystal, CrTe3. The pristine nanomaterial was purified and size-selected by centrifugation, nanosheet dimensions in the fractions quantified by atomic force microscopy and studied by Raman, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and photo spectroscopic measurements. We find a dependence of the relative intensities of the CrTe3 Raman modes on the propagation direction of the incident light, which prevents a correlation of the Raman spectral profile to the nanosheet dimensions. XPS and EDX reveal that the contribution of surface oxides to the spectra is reduced after exfoliation compared to the bulk material. Further, the decomposition mechanism of the nanosheets was studied by time-dependent extinction measurements after water titration experiments to initially dry solvents, which suggest that water plays a significant role in the material decomposition.
- ItemTowards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition(Basel : MDPI, 2022) Franck, Max; Dabrowski, Jaroslaw; Schubert, Markus Andreas; Wenger, Christian; Lukosius, MindaugasThe growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth.
- ItemThe impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films(Chichester [u.a.] : Wiley, 2020) Karim, Marwa; Lopes, Joao Marcelo J.; Ramsteiner, ManfredWe utilized excitation in the ultraviolet (UV) spectral range for the study of hexagonal boron nitride (h-BN) thin films on different substrates by Raman spectroscopy. Whereas UV excitation offers fundamental advantages for the investigation of h-BN and heterostructures with graphene, the actual Raman spectra recorded under ambient conditions reveal a temporal decay of the signal intensity. The disappearance of the Raman signal is found to be induced by thermally activated chemical reactions with ambient molecules at the h-BN surface. The chemical reactions could be strongly suppressed under vacuum conditions which, however, favor the formation of a carbonaceous surface contamination layer. For the improvement of the signal-to-noise ratio under ambient conditions, we propose a line-scan method for the acquisition of UV Raman spectra in atomically thin h-BN, a material which is expected to play a key role in future technologies based on 2D van der Waals heterostructures. © 2020 The Authors. Journal of Raman Spectroscopy published by John Wiley & Sons Ltd
- ItemEvolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films(Weinheim : Wiley-VCH, 2021) Zallo, Eugenio; Dragoni, Daniele; Zaytseva, Yuliya; Cecchi, Stefano; Borgardt, Nikolai I.; Bernasconi, Marco; Calarco, RaffaellaGeSbTe (GST) phase-change alloys feature layered crystalline structures made of lamellae separated by van der Waals (vdW) gaps. This work sheds light on the dependence of interlamellae interactions at the vdW gap on film thickness of GST alloys as probed by vibrational spectroscopy. Molecular beam epitaxy is used for designing GST layers down to a single lamella. By combining density-functional theory and Raman spectroscopy, a direct and simple method is demonstrated to identify the thickness of the GST film. The shift of the vibrational modes is studied as a function of the layer size, and the low-frequency range opens up a new route to probe the number of lamellae for different GST compositions. Comparison between experimental and theoretical Raman spectra highlights the precision growth control obtained by the epitaxial technique.
- ItemGeneral synthesis of 2D rare-earth oxide single crystals with tailorable facets(Oxford : Oxford University Press, 2021) Li, Linyang; Lu, Fangyun; Xiong, Wenqi; Ding, Yu; Lu, Yangyi; Xiao, Yao; Tong, Xin; Wang, Yao; Jia, Shuangfeng; Wang, Jianbo; Mendes, Rafael G.; Rümmeli, Mark H.; Yuan, Shengjun; Zeng, Mengqi; Fu, LeiTwo-dimensional (2D) rare-earth oxides (REOs) are a large family of materials with various intriguing applications and precise facet control is essential for investigating new properties in the 2D limit. However, a bottleneck remains with regard to obtaining their 2D single crystals with specific facets because of the intrinsic non-layered structure and disparate thermodynamic stability of different facets. Herein, for the first time, we achieve the synthesis of a wide variety of high-quality 2D REO single crystals with tailorable facets via designing a hard-soft-acid-base couple for controlling the 2D nucleation of the predetermined facets and adjusting the growth mode and direction of crystals. Also, the facet-related magnetic properties of 2D REO single crystals were revealed. Our approach provides a foundation for further exploring other facet-dependent properties and various applications of 2D REO, as well as inspiration for the precise growth of other non-layered 2D materials.
- ItemFreestanding Nanolayers of a Wide-Gap Topological Insulator through Liquid-Phase Exfoliation(Weinheim : Wiley-VCH, 2021) Lê Anh, Mai; Potapov, Pavel; Wolf, Daniel; Lubk, Axel; Glatz, Bernhard; Fery, Andreas; Doert, Thomas; Ruck, MichaelThe layered salt Bi14Rh3I9 is a weak three-dimensional (3D) topological insulator (TI), that is, a stack of two-dimensional (2D) TIs. It has a wide non-trivial band gap of 210 meV, which is generated by strong spin-orbit coupling, and possesses protected electronic edge-states. In the structure, charged layers of (Formula presented.) (Bi4Rh)3I]2+ honeycombs and (Formula presented.) Bi2I8]2− chains alternate. The non-trivial topology of Bi14Rh3I9 is an inherent property of the 2D intermetallic fragment. Here, the exfoliation of Bi14Rh3I9 was performed using two different chemical approaches: (a) through a reaction with n-butyllithium and poly(vinylpyrrolidone), (b) through a reaction with betaine in dimethylformamide at 55 °C. The former yielded few-layer sheets of the new compound Bi12Rh3I, while the latter led to crystalline sheets of Bi14Rh3I9 with a thickness down to 5 nm and edge-lengths up to several ten microns. X-ray diffraction and electron microscopy proved that the structure of Bi14Rh3I9 remained intact. Thus, it was assumed that the particles are still TIs. Dispersions of these flakes now allow for next steps towards the envisioned applications in nanoelectronics, such as the study of quantum coherence in deposited films, the combination with superconducting particles or films for the generation of Majorana fermions, or studies on their behavior under the influence of magnetic or electric fields or in contact with various materials occurring in devices. The method presented generally allows to exfoliate layers with high specific charges and thus the use of layered starting materials beyond van der Waals crystals. © 2020 The Authors. Chemistry - A European Journal published by Wiley-VCH GmbH