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    Towards time resolved core level photoelectron spectroscopy with femtosecond x-ray free-electron lasers
    (College Park, MD : Institute of Physics Publishing, 2008) Pietzsch, A.; Föhlisch, A.; Beye, M.; Deppe, M.; Hennies, F.; Nagasono, M.; Suljotil, E.; Wurth, W.; Gahl, C.; Dörich, K.; Melnikov, A.
    We have performed core level photoelectron spectroscopy on a W(110) single crystal with femtosecond XUV pulses from the free-electron laser at Hamburg (FLASH). We demonstrate experimentally and through theoretical modelling that for a suitable range of photon fluences per pulse, time-resolved photoemission experiments on solid surfaces are possible. Using FLASH pulses in combination with a synchronized optical laser, we have performed femtosecond time-resolved core-level photoelectron spectroscopy and observed sideband formation on the W 4f lines indicating a cross correlation between femtosecond optical and XUV pulses. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Interference in strong-field ionization of a two-centre atomic system
    (College Park, MD : Institute of Physics Publishing, 2008) Ansari, Z.; Böttcher, M.; Manschwetus, B.; Rottke, H.; Sandner, W.; Verhoef, A.; Lezius, M.; Paulus, G.G.; Saenz, A.; Milošević, D.B.
    Strong-field photoionization of argon dimers by a few-cycle laser pulse is investigated using electron-ion coincidence momentum spectroscopy. The momentum distribution of the photoelectrons exhibits interference due to the emission from the two atomic argon centres, in analogy with a Young's doubleslit experiment. However, a simulation of the dimer photoelectron momentum spectrum based on the atomic spectrum supplemented with a theoretically derived interference term leads to distinct deviations from the experimental result. The deviations may have their origin in a complex electron dynamics during strong-field ionization of the Ar2 dimer. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Terahertz emission from lithium doped silicon under continuous wave interband optical excitation
    (Bristol : IOP Publ., 2015) Andrianov, A.V.; Zakhar'in, A.O.; Zhukavin, R.K.; Shastin, V.N.; Abrosimov, N.V.
    We report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state.
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    Terahertz transient stimulated emission from doped silicon
    (Melville, NY : AIP Publishing, 2020) Pavlov, S.G.; Deßmann, N.; Pohl, A.; Zhukavin, R.K.; Klaassen, T.O.; Abrosimov, N.V.; Riemann, H.; Redlich, B.; Van Der Meer, A.F.G.; Ortega, J.-M.; Prazeres, R.; Orlova, E.E.; Muraviev, A.V.; Shastin, V.N.; Hübers, H.-W.
    Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO. The analysis of the lasing threshold and emission spectra indicates that the stimulated emission occurs due to combined population inversion based lasing and stimulated Raman scattering. Giant gain has been obtained in the optically pumped silicon due to large THz cross sections of intracenter impurity transitions and resonant intracenter electronic scattering. The transient-type emission is formed under conditions when the pump pulse intervals exceed significantly the photon lifetime in the laser resonator. © 2020 Author(s).