Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

Loading...
Thumbnail Image

Date

Editor

Advisor

Volume

647

Issue

Journal

Journal of physics : Conference Series

Series Titel

Book Title

Publisher

Bristol : IOP Publ.

Supplementary Material

Other Versions

Abstract

We report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state.

Description

Keywords GND

Conference

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) 29 June to 2 July 2015, Salamanca, Spain

Publication Type

Article

Version

publishedVersion

Collections

License

CC BY 3.0 Unported