Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

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Date
2015
Volume
647
Issue
Journal
Journal of physics : Conference Series
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Publisher
Bristol : IOP Publ.
Abstract

We report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state.

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Andrianov, A. V., Zakhar’in, A. O., Zhukavin, R. K., Shastin, V. N., & Abrosimov, N. V. (2015). Terahertz emission from lithium doped silicon under continuous wave interband optical excitation (Bristol : IOP Publ.). Bristol : IOP Publ. https://doi.org//10.1088/1742-6596/647/1/012015
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CC BY 3.0 Unported