Terahertz emission from lithium doped silicon under continuous wave interband optical excitation
dc.bibliographicCitation.firstPage | 012015 | eng |
dc.bibliographicCitation.journalTitle | Journal of physics : Conference Series | eng |
dc.bibliographicCitation.volume | 647 | eng |
dc.contributor.author | Andrianov, A.V. | |
dc.contributor.author | Zakhar'in, A.O. | |
dc.contributor.author | Zhukavin, R.K. | |
dc.contributor.author | Shastin, V.N. | |
dc.contributor.author | Abrosimov, N.V. | |
dc.date.accessioned | 2022-07-05T09:27:14Z | |
dc.date.available | 2022-07-05T09:27:14Z | |
dc.date.issued | 2015 | |
dc.description.abstract | We report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/9512 | |
dc.identifier.uri | https://doi.org/10.34657/8550 | |
dc.language.iso | eng | eng |
dc.publisher | Bristol : IOP Publ. | eng |
dc.relation.doi | https://doi.org/10.1088/1742-6596/647/1/012015 | |
dc.relation.essn | 1742-6596 | |
dc.rights.license | CC BY 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.gnd | Konferenzschrift | ger |
dc.subject.other | Crystal impurities | eng |
dc.subject.other | Dynamics | eng |
dc.subject.other | Electrons | eng |
dc.subject.other | Emission spectroscopy | eng |
dc.subject.other | Excited states | eng |
dc.subject.other | Ground state | eng |
dc.subject.other | Lithium | eng |
dc.subject.other | Nanostructures | eng |
dc.subject.other | Optoelectronic devices | eng |
dc.subject.other | Photoexcitation | eng |
dc.subject.other | Continuous Wave | eng |
dc.subject.other | Electron-hole recombination | eng |
dc.subject.other | Emission spectrums | eng |
dc.subject.other | Intraexciton transitions | eng |
dc.subject.other | Non-equilibrium electrons | eng |
dc.subject.other | Radiative transitions | eng |
dc.subject.other | Terahertz emission spectrum | eng |
dc.subject.other | Terahertz emissions | eng |
dc.subject.other | Terahertz waves | eng |
dc.title | Terahertz emission from lithium doped silicon under continuous wave interband optical excitation | eng |
dc.type | Article | eng |
dc.type | Text | eng |
dcterms.event | 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) 29 June to 2 July 2015, Salamanca, Spain | |
tib.accessRights | openAccess | eng |
wgl.contributor | IKZ | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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