Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

dc.bibliographicCitation.firstPage012015eng
dc.bibliographicCitation.journalTitleJournal of physics : Conference Serieseng
dc.bibliographicCitation.volume647eng
dc.contributor.authorAndrianov, A.V.
dc.contributor.authorZakhar'in, A.O.
dc.contributor.authorZhukavin, R.K.
dc.contributor.authorShastin, V.N.
dc.contributor.authorAbrosimov, N.V.
dc.date.accessioned2022-07-05T09:27:14Z
dc.date.available2022-07-05T09:27:14Z
dc.date.issued2015
dc.description.abstractWe report on experimental observation and study of terahertz emission from lithium doped silicon crystals under continuous wave band-to-band optical excitation. It is shown that radiative transitions of electrons from 2P excited states of lithium donor to the 1S(A1) donor ground state prevail in the emission spectrum. The terahertz emission occurs due to capture of nonequilibrium electrons to charged donors, which in turn are generated in the crystal as a result of impurity assisted electron-hole recombination. Besides the intracentre radiative transitions the terahertz emission spectrum exhibits also features at about 12.7 and 15.27 meV, which could be related to intraexciton transitions and transitions from the continuum to the free exciton ground state.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/9512
dc.identifier.urihttps://doi.org/10.34657/8550
dc.language.isoengeng
dc.publisherBristol : IOP Publ.eng
dc.relation.doihttps://doi.org/10.1088/1742-6596/647/1/012015
dc.relation.essn1742-6596
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.subject.gndKonferenzschriftger
dc.subject.otherCrystal impuritieseng
dc.subject.otherDynamicseng
dc.subject.otherElectronseng
dc.subject.otherEmission spectroscopyeng
dc.subject.otherExcited stateseng
dc.subject.otherGround stateeng
dc.subject.otherLithiumeng
dc.subject.otherNanostructureseng
dc.subject.otherOptoelectronic deviceseng
dc.subject.otherPhotoexcitationeng
dc.subject.otherContinuous Waveeng
dc.subject.otherElectron-hole recombinationeng
dc.subject.otherEmission spectrumseng
dc.subject.otherIntraexciton transitionseng
dc.subject.otherNon-equilibrium electronseng
dc.subject.otherRadiative transitionseng
dc.subject.otherTerahertz emission spectrumeng
dc.subject.otherTerahertz emissionseng
dc.subject.otherTerahertz waveseng
dc.titleTerahertz emission from lithium doped silicon under continuous wave interband optical excitationeng
dc.typeArticleeng
dc.typeTexteng
dcterms.event19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) 29 June to 2 July 2015, Salamanca, Spain
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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