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Start date: 1990 × DDC: 530 × Has files: Yes × Publisher: Basel : MDPI AG × WGL Institute: IFWD ×

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Now showing 1 - 10 of 11
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    Resonant terahertz light absorption by virtue of tunable hybrid interface phonon-plasmon modes in semiconductor nanoshells
    (Basel : MDPI AG, 2019) Nika, D.L.; Pokatilov, E.P.; Fomin, V.M.; Devreese, J.T.; Tempere, J.
    Metallic nanoshells have proven to be particularly versatile, with applications in biomedical imaging and surface-enhanced Raman spectroscopy. Here, we theoretically demonstrate that hybrid phonon-plasmon modes in semiconductor nanoshells offer similar advantages in the terahertz regime. We show that, depending on tm,n,nhe doping of the semiconductor shells, terahertz light absorption in these nanostructures can be resonantly enhanced due to the strong coupling between interface plasmons and phonons. A threefold to fourfold increase in the absorption peak intensity was achieved at specific values of electron concentration. Doping, as well as adapting the nanoshell radius, allowed for fine-tuning of the absorption peak frequencies.
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    Analysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films
    (Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.
    We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
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    High temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates
    (Basel : MDPI AG, 2020) Seifert, M.
    This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.
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    Phase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates
    (Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.
    Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
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    Two-step magnetization reversal FORC fingerprint of coupled bi-segmented Ni/Co magnetic nanowire arrays
    (Basel : MDPI AG, 2018) Fernández, J.G.; Martínez, V.V.; Thomas, A.; de la Prida Pidal, V.M.; Nielsch, K.
    First Order Reversal Curve (FORC) analysis has been established as an appropriate method to investigate the magnetic interactions among complex ferromagnetic nanostructures. In this work, the magnetization reversal mechanism of bi-segmented nanowires composed by long Co and Ni segments contacted at one side was investigated, as a model system to identify and understand the FORC fingerprint of a two-step magnetization reversal process. The resulting hysteresis loop of the bi-segmented nanowire array exhibits a completely different magnetic behavior than the one expected for the magnetization reversal process corresponding to each respective Co and Ni nanowire arrays, individually. Based on the FORC analysis, two possible magnetization reversal processes can be distinguished as a consequence of the ferromagnetic coupling at the interface between the Ni and Co segments. Depending on the relative difference between the magnetization switching fields of each segment, the softer magnetic phase induces the switching of the harder one through the injection and propagation of a magnetic domain wall when both switching fields are comparable. On the other hand, if the switching fields values differ enough, the antiparallel magnetic configuration of nanowires is also possible but energetically unfavorable, thus resulting in an unstable magnetic configuration. Making use of the different temperature dependence of the magnetic properties for each nanowire segment with different composition, one of the two types of magnetization reversal is favored, as demonstrated by FORC analyses.
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    Fe1-xNix alloy nanoparticles encapsulated inside carbon nanotubes: Controlled synthesis, structure and magnetic properties
    (Basel : MDPI AG, 2018) Ghunaim, R.; Damm, C.; Wolf, D.; Lubk, A.; Büchner, B.; Mertig, M.; Hampel, S.
    In the present work, different synthesis procedures have been demonstrated to fill carbon nanotubes (CNTs) with Fe1-xNix alloy nanoparticles (x = 0.33, 0.5). CNTs act as templates for the encapsulation of magnetic nanoparticles, and provide a protective shield against oxidation as well as prevent nanoparticles agglomeration. By variation of the reaction parameters, the purity of the samples, degree of filling, the composition and size of filling nanoparticles have been tailored and therefore the magnetic properties. The samples were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Bright-field (BF) TEM tomography, X-ray powder diffraction, superconducting quantum interference device (SQUID) and thermogravimetric analysis (TGA). The Fe1-x Nix-filled CNTs show a huge enhancement in the coercive fields compared to the corresponding bulk materials, which make them excellent candidates for several applications such as magnetic storage devices.
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    Spectral linewidth vs. Front facet reflectivity of 780 nm DFB diode lasers at high optical output power
    (Basel : MDPI AG, 2018) Nguyen, T.-P.; Wenzel, H.; Brox, O.; Bugge, F.; Ressel, P.; Schiemangk, M.; Wicht, A.; Tien, T.Q.; Tränkle, G.
    The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.
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    Proximity array device: a novel photon detector working in long wavelengths
    (Basel : MDPI AG, 2020) Rezvani, S. Javad; Di Gioacchino, Daniele; Gatti, Claudio; Ligi, Carlo; Guidi, Mariangela Cestelli; Cibella, Sara; Fretto, Matteo; Poccia, Nicola; Lupi, Stefano; Marcelli, Augusto
    We present here an innovative photon detector based on the proximity junction array device (PAD) working at long wavelengths. We show that the vortex dynamics in PAD undergoes a transition from a Mott insulator to a vortex metal state by application of an external magnetic field. The PAD also evidences a Josephson I-V characteristic with the external field dependent tunneling current. At high applied currents, we observe a dissipative regime in which the vortex dynamics is dominated by the quasi-particle contribution from the normal metal. The PAD has a relatively high photo-response even at frequencies below the expected characteristic frequency while, its superconducting properties such as the order parameter and the Josephson characteristic frequency can be modulated via external fields to widen the detection band. This device represents a promising and reliable candidate for new high-sensitivity long-wavelength detectors. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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    Disturbing-free determination of yeast concentration in DI water and in glucose using impedance biochips
    (Basel : MDPI AG, 2020) Kiani, M.; Du, N.; Vogel, M.; Raff, J.; Hübner, U.; Skorupa, I.; Bürger, D.; Schulz, S.E.; Schmidt, O.G.; Blaschke, D.; Schmidt, H.
    Deionized water and glucose without yeast and with yeast (Saccharomyces cerevisiae) of optical density OD600 that ranges from 4 to 16 has been put in the ring electrode region of six different types of impedance biochips and impedance has been measured in dependence on the added volume (20, 21, 22, 23, 24, 25 µL). The measured impedance of two out of the six types of biochips is strongly sensitive to the addition of both liquid without yeast and liquid with yeast and modelled impedance reveals a linear relationship between the impedance model parameters and yeast concentration. The presented biochips allow for continuous impedance measurements without interrupting the cultivation of the yeast. A multiparameter fit of the impedance model parameters allows for determining the concentration of yeast (cy) in the range from cy = 3.3 × 107 to cy = 17 × 107 cells/mL. This work shows that independent on the liquid, i.e., DI water or glucose, the impedance model parameters of the two most sensitive types of biochips with liquid without yeast and with liquid with yeast are clearly distinguishable for the two most sensitive types of biochips.
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    Binding energy referencing for XPS in Alkali metal-based battery materials research (II): Application to complex composite electrodes
    (Basel : MDPI AG, 2018) Oswald, S.; Thoss, F.; Zier, M.; Hoffmann, M.; Jaumann, T.; Herklotz, M.; Nikolowski, K.; Scheiba, F.; Kohl, M.; Giebeler, L.; Mikhailova, D.; Ehrenberg, H.
    X-ray photoelectron spectroscopy (XPS) is a key method for studying (electro-)chemical changes in metal-ion battery electrode materials. In a recent publication, we pointed out a conflict in binding energy (BE) scale referencing at alkali metal samples, which is manifested in systematic deviations of the BEs up to several eV due to a specific interaction between the highly reactive alkali metal in contact with non-conducting surrounding species. The consequences of this phenomenon for XPS data interpretation are discussed in the present manuscript. Investigations of phenomena at surface-electrolyte interphase regions for a wide range of materials for both lithium and sodium-based applications are explained, ranging from oxide-based cathode materials via alloys and carbon-based anodes including appropriate reference chemicals. Depending on material class and alkaline content, specific solutions are proposed for choosing the correct reference BE to accurately define the BE scale. In conclusion, the different approaches for the use of reference elements, such as aliphatic carbon, implanted noble gas or surface metals, partially lack practicability and can lead to misinterpretation for application in battery materials. Thus, this manuscript provides exemplary alternative solutions.