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Start date: 2000 × Has files: Yes × Type: Text × Publisher: München : European Geopyhsical Union × WGL Institute: IHP ×

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    An X-Band low-power and low-phase-noise VCO using bondwire inductor
    (München : European Geopyhsical Union, 2009) Hu, K.; Herzel, F.; Scheytt, J.C.
    In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.
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    Charge pump design in 130 nm SiGe BiCMOS technology for low-noise fractional-N PLLs
    (München : European Geopyhsical Union, 2015) Kucharski, M.; Herzel, F.
    This paper presents a numerical comparison of charge pumps (CP) designed for a high linearity and a low noise to be used in a fractional-N phase-locked loop (PLL). We consider a PLL architecture, where two parallel CPs with DC offset are used. The CP for VCO fine tuning is biased at the output to keep the VCO gain constant. For this specific architecture, only one transistor per CP is relevant for phase detector linearity. This can be an nMOSFET, a pMOSFET or a SiGe HBT, depending on the design. The HBT-based CP shows the highest linearity, whereas all charge pumps show similar device noise. An internal supply regulator with low intrinsic device noise is included in the design optimization.