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- ItemStrain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates(Melville, NY : American Inst. of Physics, 2023) Knauer, A.; Kolbe, T.; Hagedorn, S.; Hoepfner, J.; Guttmann, M.; Cho, H.K.; Rass, J.; Ruschel, J.; Einfeldt, S.; Kneissl, M.; Weyers, M.High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice constant compared to conventional non-annealed AlN/sapphire grown by metalorganic vapor phase epitaxy (MOVPE). This leads to additional lattice mismatch between the template and the AlGaN-based ultraviolet-C light emitting diode (UVC LED) heterostructure grown on these templates. This mismatch introduces additional compressive strain in AlGaN quantum wells resulting in enhanced transverse electric polarization of the quantum well emission at wavelengths below 235 nm compared to layer structures deposited on conventional MOVPE-grown AlN templates, which exhibit mainly transverse magnetic polarized emission. In addition, high temperature annealed AlN/sapphire templates also feature reduced defect densities leading to reduced non-radiative recombination. Based on these two factors, i.e., better outcoupling efficiency of the transverse electric polarized light and an enhanced internal quantum efficiency, the performance characteristic of far-UVC LEDs emitting at 231 nm was further improved with a cw optical output power of 3.5 mW at 150 mA.
- ItemExtensive study of magneto-optical and optical properties of Cd1−xMnxTe between 675 and 1025 nm(New York, NY : American Inst. of Physics, 2023) Tyborski, Christoph; Hassan, Muhammad T.; Flisgen, Thomas; Schiemangk, Max; Wicht, AndreasWe determine Faraday rotations and measure the optical reflection and transmission from magneto-optical Cd1−xMnxTe crystals with various stoichiometric ratios. For wavelengths between 675 and 1025 nm, we derive Verdet constants, optical loss coefficients, and the complex indices of reflection that are relevant measures to find suitable stoichiometric ratios of Cd1−xMnxTe for the realization of miniaturized optical isolators. By reflection and transmission measurements, we determine the stoichiometric ratios of several different Cd1−xMnxTe crystals and discuss the observed dependence of the optical properties on the stoichiometric ratio with respect to their use in optical isolators. Finally, we show the relevant figure of merit, i.e., the ratio of Verdet constants and optical loss coefficients for Cd1−xMnxTe crystals with Mn contents ranging from x = 0.14 to x = 0.50.
- ItemTemperature dependence of the complex permittivity in microwave range of some industrial polymers(New York, NY : American Inst. of Physics, 2022) Porteanu, Horia-Eugen; Kaempf, Rudolf; Flisgen, Thomas; Heinrich, WolfgangThe microwave properties of a number of polymers common in industry are investigated. A cylindrical resonator in the TM012 mode is used. The cavity perturbation method and detailed COMSOL simulations are applied for extracting the complex permittivity as a function of temperature. The results are useful for the design of plastic processing tools by heating with electromagnetic fields. The intrinsic parameters of absorption are derived based on two exponential decays: polarization and Arrhenius dependence of the decay times on temperature.
- ItemRadiofrequency Electromagnetic Fields Cause Non-Temperature-Induced Physical and Biological Effects in Cancer Cells(Basel : MDPI, 2022) Wust, Peter; Veltsista, Paraskevi D.; Oberacker, Eva; Yavvari, Prabhusrinivas; Walther, Wolfgang; Bengtsson, Olof; Sterner-Kock, Anja; Weinhart, Marie; Heyd, Florian; Grabowski, Patricia; Stintzing, Sebastian; Heinrich, Wolfgang; Stein, Ulrike; Ghadjar, PirusNon-temperature-induced effects of radiofrequency electromagnetic fields (RF) have been controversial for decades. Here, we established measurement techniques to prove their existence by investigating energy deposition in tumor cells under RF exposure and upon adding amplitude modulation (AM) (AMRF). Using a preclinical device LabEHY-200 with a novel in vitro applicator, we analyzed the power deposition and system parameters for five human colorectal cancer cell lines and measured the apoptosis rates in vitro and tumor growth inhibition in vivo in comparison to water bath heating. We showed enhanced anticancer effects of RF and AMRF in vitro and in vivo and verified the non-temperature-induced origin of the effects. Furthermore, apoptotic enhancement by AM was correlated with cell membrane stiffness. Our findings not only provide a strategy to significantly enhance non-temperature-induced anticancer cell effects in vitro and in vivo but also provide a perspective for a potentially more effective tumor therapy.
- ItemAnalysis of Mechanical Strain in AlGaN/GaN HFETs(Weinheim : Wiley-VCH, 2023) Yazdani, Hossein; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Brunner, Frank; Ostermay, Ina; Chevtchenko, Serguei; Würfl, JoachimHerein, the influence of mechanical strain induced by passivation layers on the electrical performance of AlGaN/GaN heterostructure field-effect transistor is investigated. We studied the physical mechanism of a threshold voltage (Vth) shift for the monolithically fabricated on/off devices reported earlier by our group. For that, theoretical calculations, simulation-based analysis, and nano-beam electron diffraction (NBED) measurements based on STEM are used. Strain distribution in the gate vicinity of transistors is compared for a SiNx passivation layer with intrinsic stress from ≈0.5 to −1 GPa for normally on and normally off devices, respectively. The strain in epitaxial layers transferred by intrinsic stress of SiNx is quantitatively evaluated using NEBD method. Strain dissimilarity Δε = 0.23% is detected between normally on and normally off devices. Using this method, quantitative correlation between 1.13 V of Vth shift and microscopic strain difference in the epitaxial layers caused by 1.5 GPa intrinsic stress variation in passivation layer is provided. It is showed in this correlation that about half of the reported threshold voltage shift is induced by strain, i.e., by the piezoelectric effect. The rest of Vth shift is caused by the fabrication process. Therefore, various components/mechanisms contributing to the measured Vth shift are distinguished.
- ItemHigh-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness(Bristol : IoP Publ., 2022) Elattar, M.; Brox, O.; Della Casa, P.; Mogilatenko, A.; Maaßdorf, A.; Martin, D.; Wenzel, H.; Knigge, A.; Weyers, M.; Crump, P.We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak conversion efficiency and beam quality in comparison to their standard gain-guided counterparts. To realize this new variant (eSAS-V2), a two-step epitaxial growth process involving in situ etching is used to integrate current-blocking layers, optimized for tunnel current suppression, within the p-Al0.8GaAs cladding layer of an extreme-triple-asymmetric epitaxial structure with a thin p-side waveguide. The blocking layers are thus in close proximity to the active zone, resulting in strong suppression of current spreading and lateral carrier accumulation. eSAS-V2 devices with 4 mm resonator length and varying stripe widths are characterized and compared to previous eSAS variant (eSAS-V1) as well as gain-guided reference devices, all having the same dimensions and epitaxial structure. Measurement results show that the new eSAS-V2 variant eliminates an estimated 89% of lateral current spreading, resulting in a strong threshold current reduction of 29% at 90 μm stripe width, while slope and series resistance are broadly unchanged. The novel eSAS-V2 devices also maintain high conversion efficiency up to high continuous-wave optical power, with an exemplary 90 μm device having 51.5% at 20 W. Near-field width is significantly narrowed in both eSAS variants, but eSAS-V2 exhibits a wider far-field angle, consistent with the presence of index guiding. Nonetheless, eSAS-V2 achieves higher beam quality and lateral brightness than gain-guided reference devices, but the index guiding in this realization prevents it from surpassing eSAS-V1. Overall, the different performance benefits of the eSAS approach are clearly demonstrated.
- ItemHigh-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression(Bristol : IOP Publ., 2023) Chou, Ta-Shun; Seyidov, Palvan; Bin Anooz, Saud; Grüneberg, Raimund; Rehm, Jana; Tran, Thi Thuy Vi; Fiedler, Andreas; Tetzner, Kornelius; Galazka, Zbigniew; Albrecht, Martin; Popp, AndreasIn this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing μm level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting from >1.5 to 2 μm. These particles seem to induce structural defects such as twin lamellae, thereby harming the electrical properties of the grown film. The origin of the parasitic particle is attributed to the parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, which can be largely reduced by increasing the total gas flow and decreasing the showerhead distance to the susceptor. A film thickness of up to 4 μm has been achieved after minimizing the density of parasitic particles. Thereby, RT Hall measurements reveal carrier mobilities of 160 cm2V−1s−1 at carrier concentrations of 5.7 × 1016cm−3
- ItemCompact, Watt-class 785 nm dual-wavelength master oscillator power amplifiers(Bristol ; Philadelphia, PA : IOP Publishing Ltd., 2022) Müller, André; Maiwald, Martin; Sumpf, Bernd785 nm micro-integrated, dual-wavelength master oscillator power amplifiers with a footprint of 5 mm × 25 mm are presented. They are based on Y-branch distributed Bragg reflector ridge waveguide diode lasers and anti-reflection coated tapered amplifiers. In order to reduce the impact of potential optical feedback, devices with master oscillator front facet reflectivities of 5% and 30% as well as with an integrated miniaturized optical isolator have been realized. A comparison up to 1 W shows narrowband dual wavelength laser emission with a spectral distance of 0.6 nm (10 cm−1) and individual spectral widths <20 pm. As expected, a higher front facet reflectivity leads to a significant reduction of feedback related mode hops. Longitudinal modes corresponding to the master oscillator resonator length remain within spectral windows <0.15 nm (3 cm−1), suitable for applications such as Raman spectroscopy and especially shifted excitation Raman difference spectroscopy. Integrating a compact 30 dB optical isolator completely eliminates the observed optical feedback effects. Lateral beam propagation ratios of 1.2 (1/e2) enable easy beam shaping and fiber coupling. Outside of the experimental comparison, the developed MOPAs provide up to 2.7 W of optical output power available for applications.
- ItemSuppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device application(Melville, NY : American Inst. of Physics, 2023) Chou, Ta-Shun; Seyidov, Palvan; Bin Anooz, Saud; Grüneberg, Raimund; Pietsch, Mike; Rehm, Jana; Tran, Thi Thuy Vi; Tetzner, Kornelius; Galazka, Zbigniew; Albrecht, Martin; Irmscher, Klaus; Fiedler, Andreas; Popp, AndreasThis work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 μm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm2 V-1 s-1 (2.2 μm) and 163 cm2 V-1 s-1 (3 μm) at room temperature were measured for (100) β-Ga2O3 films with carrier concentrations of 5.7 × 1016 and 7.1 × 1016 cm-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 1015 cm-3.
- ItemRefractory metal-based ohmic contacts on β-Ga2O3 using TiW(Melville, NY : AIP Publ., 2022) Tetzner, Kornelius; Schewski, Robert; Popp, Andreas; Anooz, Saud Bin; Chou, Ta-Shun; Ostermay, Ina; Kirmse, Holm; Würfl, JoachimThe present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures between 400 and 900 °C. Optimum contact properties with a contact resistance down to 1.5 × 10-5 ω cm2 were achieved after annealing at 700 °C in nitrogen on highly doped β-Ga2O3. However, a significant contact resistance increase was observed at annealing temperatures above 700 °C. Cross-sectional analyses of the contacts using scanning transmission electron microscopy revealed the formation of a TiOx interfacial layer of 3-5 nm between TiW and β-Ga2O3. This interlayer features an amorphous structure and most probably possesses a high amount of vacancies and/or Ga impurities supporting charge carrier injection. Upon annealing at temperatures of 900 °C, the interlayer increases in thickness up to 15 nm, featuring crystalline-like properties, suggesting the formation of rutile TiO2. Although severe morphological changes at higher annealing temperatures were also verified by atomic force microscopy, the root cause for the contact resistance increase is attributed to the structural changes in thickness and crystallinity of the interfacial layer.