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DDC: 510 × Subject: crystal growth ×

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Now showing 1 - 5 of 5
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    Optimal control of 3D state constrained induction heating problems with nonlocal radiation effects
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2009) Druet, Pierre-Étienne; Klein, Olaf; Sprekels, Jürgen; Tröltzsch, Fredi; Yousept, Irwin
    The paper is concerned with a class of optimal heating problems in semiconductor single crystal growth processes. To model the heating process, time-harmonic Maxwell equations are considered in the system of the state. Due to the high temperatures characterizing crystal growth, it is necessary to include nonlocal radiation boundary conditions and a temperature-dependent heat conductivity in the description of the heat transfer process. The first goal of this paper is to prove the existence and uniqueness of the solution to the state equation. The regularity analysis associated with the time harmonic Maxwell equations is also studied. In the second part of the paper, the existence and uniqueness of the solution to the corresponding linearized equation is shown. With this result at hand, the differentiability of the control-to-state mapping operator associated with the state equation is derived. Finally, based on the theoretical results, first oder necessary optimality conditions for an associated optimal control problem are established.
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    Modeling and simulation of the lateral photovoltage scanning method
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Farrell, Patricio; Kayser, Stefan; Rotundo, Nella
    The fast, cheap and nondestructive lateral photovoltage scanning (LPS) method detects inhomogeneities in semiconductors crystals. The goal of this paper is to model and simulate this technique for a given doping profile. Our model is based on the semiconductor device equations combined with a nonlinear boundary condition, modelling a volt meter. To validate our 2D and 3D finite volume simulations, we use theory developed by Tauc [21] to derive three analytical predictions which our simulation results corroborate, even for anisotropic 2D and 3D meshes. Our code runs about two orders of magnitudes faster than earlier implementations based on commercial software [15]. It also performs well for small doping concentrations which previously could not be simulated at all due to numerical instabilities. Our simulations provide experimentalists with reference laser powers for which meaningful voltages can still be measured. For higher laser power the screening effect does not allow this anymore.
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    Detecting striations via the lateral photovoltage scanning method without screening effect
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Kayser, Stefan; Farrell, Patricio; Rotundo, Nella
    The lateral photovoltage scanning method (LPS) detects doping inhomogeneities in semiconductors such as Si, Ge and Si(x)Ge(1-x) in a cheap, fast and nondestructive manner. LPS relies on the bulk photovoltaic effect and thus can detect any physical quantity affecting the band profiles of the sample. LPS finite volume simulation using commercial software suffer from long simulation times and convergence instabilities. We present here an open-source finite volume simulation for a 2D Si sample using the ddfermi simulator. For low injection conditions we show that the LPS voltage is proportional to the doping gradient as previous theory suggested under certain conditions. For higher injection conditions we directly show how the LPS voltage and the doping gradient differ and link the physical effect of lower local resolution to the screening effect. Previously, the loss of local resolution was assumed to be only connected to the enlargement of the excess charge carrier distribution.
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    Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Dreyer, Wolfgang; Druet, Pierre-Étienne; Klein, Olaf; Sprekels, Jürgen
    This paper deals with the mathematical modeling and simulation of crystal growth processes by the so-called Czochralski method and related methods, which are important industrial processes to grow large bulk single crystals of semiconductor materials such as, e.,g., gallium arsenide (GaAs) or silicon (Si) from the melt. In particular, we investigate a recently developed technology in which traveling magnetic fields are applied in order to control the behavior of the turbulent melt flow. Since numerous different physical effects like electromagnetic fields, turbulent melt flows, high temperatures, heat transfer via radiation, etc., play an important role in the process, the corresponding mathematical model leads to an extremely difficult system of initial-boundary value problems for nonlinearly coupled partial differential equations ...
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    On unwanted nucleation phenomena at the wall of a VGF chamber
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Dreyer, Wolfgang; Duderstadt, Frank; Eichler, Stefan; Naldzhieva, Margarita
    This is preliminary study on a phenomenon that happens during crystal growth of GaAs in a vertical gradient freeze (VGF) device. Here unwanted polycrystals nucleate at the chamber wall and move into the interior of the crystal. This happens within an undercooled region in the vicinity of the triple point, where the liquid-solid interface meets the chamber wall. The size and shape of that region is modelled by the Gibbs-Thomson law, which will be rederived in this paper. Hereafter we identify the crucial parameter, whose proper adjustment may minimize the undercooled region.