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Now showing 1 - 5 of 5
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    Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms
    (Washington, DC : ACS, 2017) Huang, Huiying; Trotta, Rinaldo; Huo, Yongheng; Lettner, Thomas; Wildmann, Johannes S.; Martín-Sánchez, Javier; Huber, Daniel; Reindl, Marcus; Zhang, Jiaxiang; Zallo, Eugenio; Schmidt, Oliver G.; Rastelli, Armando
    We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
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    Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction
    (Weinheim : Wiley-VCH, 2022) Mazzolini, Piero; Fogarassy, Zsolt; Parisini, Antonella; Mezzadri, Francesco; Diercks, David; Bosi, Matteo; Seravalli, Luca; Sacchi, Anna; Spaggiari, Giulia; Bersani, Danilo; Bierwagen, Oliver; Janzen, Benjamin Moritz; Marggraf, Marcella Naomi; Wagner, Markus R.; Cora, Ildiko; Pécz, Béla; Tahraoui, Abbes; Bosio, Alessio; Borelli, Carmine; Leone, Stefano; Fornari, Roberto
    Unintentionally doped (001)-oriented orthorhombic κ-Ga2O3 epitaxial films on c-plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in-plane electronic conduction. Comparing the in- and out-of-plane resistance on well-defined sample geometries, it is experimentally proved that the in-plane resistivity is at least ten times higher than the out-of-plane one. The introduction of silane during metal-organic vapor phase epitaxial growth not only allows for n-type Si extrinsic doping, but also results in the increase of more than one order of magnitude in the domain size (up to ≈ 300 nm) and mobility (highest µ ≈ 10 cm2V−1s−1, with corresponding lowest ρ ≈ 0.2 Ωcm). To qualitatively compare the mean domain dimension in κ-Ga2O3 epitaxial films, non-destructive experimental procedures are provided based on X-ray diffraction and Raman spectroscopy. The results of this study pave the way to significantly improved in-plane conduction in κ-Ga2O3 and its possible breakthrough in new generation electronics. The set of cross-linked experimental techniques and corresponding interpretation here proposed can apply to a wide range of material systems that suffer/benefit from domain-related functional properties.
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    Dynamically tuned arrays of polariton parametric oscillators
    (Washington, DC : OSA, 2020) Kuznetsov, Alexander S.; Dagvadorj, Galbadrakh; Biermann, Klaus; Szymanska, Marzena H.; Santos, Paulo V.
    The spatially varying strain field of the wave induces state-dependent energy shifts of discrete polariton levels with the appropriate symmetry for OPO triggering. The robustness of the dynamic acoustic tuning is demonstrated by the synchronous excitation of an array of confined OPOs using a single wave, which thus opens the way for the realization of scalable nonlinear on-chip systems. © 2020 Optical Society of America
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    Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate
    (Bristol : IOP Publ., 2019) Jenichen, B.; Cheng, Z.; Hanke, M.; Herfort, J.; Trampert, A.
    We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd.
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    Terahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas
    (Bristol : IOP Publ., 2023) Lü, X.; Röben, B.; Biermann, K.; Wubs, J.R.; Macherius, U.; Weltmann, K.-D.; van Helden, J.H.; Schrottke, L.; Grahn, H.T.
    We report on terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures, which exhibit single-mode emission at 3.360, 3.921, and 4.745 THz. These frequencies are in close correspondence to fine-structure transitions of Al atoms, N+ ions, and O atoms, respectively. Due to the low electrical pump power of these THz QCLs, they can be operated in a mechanical cryocooler in continuous-wave mode, while a sufficient intrinsic tuning range of more than 5 GHz is maintained. The single-mode operation and the intrinsic tuning range of these THz QCLs allow for the application of these lasers as radiation sources for high-resolution absorption spectroscopy to determine the absolute densities of Al atoms, N+ ions, and O atoms in plasmas.