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DDC: 530 × Publisher: Washington, DC : American Chemical Society × WGL Institute: IFWD ×

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    TiNb2O7 and VNB9O25 of ReO3 type in hybrid Mg−Li batteries: Electrochemical and interfacial insights
    (Washington, DC : American Chemical Society, 2020) Maletti, Sebastian; Herzog-Arbeitman, Abraham; Oswald, Steffen; Senyshyn, Anatoliy; Giebeler, Lars; Mikhailova, Daria
    As one of the beyond-lithium battery concepts, hybrid metal-ion batteries have aroused growing interest. Here, TiNb2O7 (TNO) and VNb9O25 (VNO) materials were prepared using a high-temperature solid-state synthesis and, for the first time, comprehensively examined in hybrid Mg−Li batteries. Both materials adopt ReO3-related structures differing in the interconnection of oxygen polyhedra and the resulting guest ion diffusion paths. We show applicability of the compounds in hybrid cells providing capacities comparable to those reached in Li-ion batteries (LIBs) at room temperature (220 mAh g−1 for TNO and 150 mAh g−1 for VNO, both at 0.1 C), their operability in the temperature range between −10 and 60 °C, and even better capacity retention than in pure LIBs, rendering this hybrid technology superior for long-term application. Post mortem X-ray photoelectron spectroscopy reveals a cathode−electrolyte interface as a key ingredient for providing excellent electrochemical stability of the hybrid battery. A significant contribution of the intercalation pseudocapacitance to charge storage was observed for both materials in Li- and Mg−Li batteries. However, the pseudocapacitive part is higher for TNO than for VNO, which correlates with structural distinctions, providing better accessibility of diffusion pathways for guest cations in TNO and, as a consequence, a higher ionic transport within the crystal structure. © 2020 American Chemical Society
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    X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
    (Washington, DC : American Chemical Society, 2011) Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.
    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.