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DDC: 530 × Subject: Low temperatures ×

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    Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
    (New York, NY : American Inst. of Physics, 2020) Boy, Johannes; Handwerg, Martin; Mitdank, Rüdiger; Galazka, Zbigniew; Fischer, Saskia F.
    The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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    Process flow to integrate nanostructures on silicon grass in surface micromachined systems
    (Bristol : IOP Publ., 2016) Mehner, H.; Müller, L.; Biermann, S.; Hänschke, F.; Hoffmann, M.
    The process flow to integrate metallic nanostructures in surface micromachining processes is presented. The nanostructures are generated by evaporation of microstructured silicon grass with metal. The process flow is based on the lift-off of a thin amorphous silicon layer deposited using a CVD process. All steps feature a low temperature load beneath 120 °C and high compatibility with many materials as only well-established chemicals are used. As a result metallic nanostructures usable for optical applications can be generated as part of multilayered microsystems fabricated in surface micromachining.
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    Nanofiber-based high-Q microresonator for cryogenic applications
    (Washington, DC : Soc., 2020) Hütner, Johanna; Hoinkes, Thomas; Becker, Martin; Rothhardt, Manfred; Rauschenbeute, Arno; Skoff, Sarah M.
    We demonstrate a cryo-compatible, fully fiber-integrated, alignment-free optical microresonator. The compatibility with low temperatures expands its possible applications to the wide field of solid-state quantum optics, where a cryogenic environment is often a requirement. At a temperature of 4.6 K we obtain a quality factor of (9.9 ± 0.7) × 106. In conjunction with the small mode volume provided by the nanofiber, this cavity can be either used in the coherent dynamics or the fast cavity regime, where it can provide a Purcell factor of up to 15. Our resonator is therefore suitable for significantly enhancing the coupling between light and a large variety of different quantum emitters and due to its proven performance over a wide temperature range, also lends itself for the implementation of quantum hybrid systems. © 2020 OSA - The Optical Society. All rights reserved.
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    Valence effect on the thermopower of Eu systems
    (College Park, MD : American Physical Society, 2020) Stockert, U.; Seiro, S.; Seiro, S.; Caroca-Canales, N.; Hassinger, E.; Hassinger, E.; Geibel, C.
    We investigated the thermoelectric transport properties of EuNi2P2 and EuIr2Si2 to evaluate the relevance of Kondo interaction and valence fluctuations in these materials. While the thermal conductivities behave conventionally, the thermopower curves exhibit large values with pronounced maxima as typically observed in Ce- and Yb-based heavy-fermion materials. However, neither the positions of these maxima nor the absolute thermopower values at low temperature are in line with the heavy-fermion scenario and the moderately enhanced effective charge carrier masses. Instead, we may relate the thermopower in our materials to the temperature-dependent Eu valence by taking into account changes in the chemical potential. Our analysis confirms that valence fluctuations play an important role in EuNi2P2 and EuIr2Si2.