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- ItemEvolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model(Melville, NY : American Inst. of Physics, 2016) Schewski, R.; Baldini, M.; Irmscher, K.; Fiedler, A.; Markurt, T.; Neuschulz, B.; Remmele, T.; Schulz, T.; Wagner, G.; Galazka, Z.; Albrecht, M.We study the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction. Atomic force microscopy of layers grown on substrates with miscut-angles smaller than 2° reveals the growth proceeding through nucleation and growth of two-dimensional islands. With increasing miscut-angle, step meandering and finally step flow growth take place. While step-flow growth results in layers with high crystalline perfection, independent nucleation of two-dimensional islands causes double positioning on the (100) plane, resulting in twin lamellae and stacking mismatch boundaries. Applying nucleation theory in the mean field approach for vicinal surfaces, we can fit experimentally found values for the density of twin lamellae in epitaxial layers as dependent on the miscut-angle. The model yields a diffusion coefficient for Ga adatoms of D = 7 × 10−9 cm2 s−1 at a growth temperature of 850 °C, two orders of magnitude lower than the values published for GaAs.
- ItemReducing the nucleation barrier in magnetocaloric Heusler alloys by nanoindentation(New York : American Institute of Physics, 2016) Niemann, R.; Hahn, S.; Diestel, A.; Backen, A.; Schultz, L.; Nielsch, K.; Wagner, M.F.-X.; Fähler, S.Magnetocaloric materials are promising as solid state refrigerants for more efficient and environmentally friendly cooling devices. The highest effects have been observed in materials that exhibit a first-order phase transition. These transformations proceed by nucleation and growth which lead to a hysteresis. Such irreversible processes are undesired since they heat up the material and reduce the efficiency of any cooling application. In this article, we demonstrate an approach to decrease the hysteresis by locally changing the nucleation barrier. We created artificial nucleation sites and analyzed the nucleation and growth processes in their proximity. We use Ni-Mn-Ga, a shape memory alloy that exhibits a martensitic transformation. Epitaxial films serve as a model system, but their high surface-to-volume ratio also allows for a fast heat transfer which is beneficial for a magnetocaloric regenerator geometry. Nanoindentation is used to create a well-defined defect. We quantify the austenite phase fraction in its proximity as a function of temperature which allows us to determine the influence of the defect on the transformation.
- ItemInvestigation and comparison of GaN nanowire nucleation and growth by the catalyst-assisted and self-induced approaches(Berlin : Humboldt-Universität zu Berlin, 2010) Chèze, CarolineThis work focuses on the nucleation and growth mechanisms of GaN nanowires (NWs) by molecular beam epitaxy (MBE). The main novelties of this study are the intensive employment of in-situ techniques and the direct comparison of self-induced and catalyst-induced NWs. On silicon substrates, GaN NWs form in MBE without the use of any external catalyst seed. On sapphire, in contrast, NWs grow under identical conditions only in the presence of Ni seeds. The processes leading to NW nucleation are fundamentally different for both approaches. In the catalyst-assisted approach, Ga strongly reacts with the catalyst Ni particles whose crystal structure and phases are decisive for the NW growth, while in the catalyst-free approach, N forms an interfacial layer with Si before the intense nucleation of GaN starts. Both approaches yield monocrystalline wurtzite GaN NWs, which grow in the Ga-polar direction. However, the catalyst-assisted NWs are longer than the catalyst-free ones after growth under identical conditions, and they contain many stacking faults. By comparison the catalyst-free NWs are largely free of defects and their photoluminescence is much more intense than the one of the catalyst-assisted NWs. All of these differences can be explained as effects of the catalyst. The seed captures Ga atoms arriving at the NW tip more efficiently than the bare top facet in the catalyst-free approach. In addition, stacking faults could result from both the presence of the additional solid phase constituted by the catalyst-particles and the contamination of the NWs by the catalyst material. Finally, such contamination would generate non-radiative recombination centers. Thus, the use of catalyst seeds may offer an additional way to control the growth of NWs, but both the structural and the optical material quality of catalyst-free NWs are superior.
- ItemMolecular beam epitaxy of GaAs nanowires and their suitability for optoelectronic applications – comparing Au- and self-assisted growth methods(Berlin : Humboldt-Universität zu Berlin, 2011) Breuer, SteffenIn this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1\% is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.