Filters

2011 - 20182

More filters

20202
Reset filters

Settings

DDC: 530 × Subject: surface property ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Tuning the interplay between nematicity and spin fluctuations in Na1-x Li x FeAs superconductors
    (London : Nature Publishing Group, 2018) Baek, S.-H.; Bhoi, D.; Nam, W.; Lee, B.; Efremov, D.V.; Büchner, B.; Kim, K.H.
    Strong interplay of spin and charge/orbital degrees of freedom is the fundamental characteristic of the iron-based superconductors (FeSCs), which leads to the emergence of a nematic state as a rule in the vicinity of the antiferromagnetic state. Despite intense debate for many years, however, whether nematicity is driven by spin or orbital fluctuations remains unsettled. Here, by use of transport, magnetization, and 75As nuclear magnetic resonance (NMR) measurements, we show a striking transformation of the relationship between nematicity and spin fluctuations (SFs) in Na1-x Li x FeAs; For x ≤ 0.02, the nematic transition promotes SFs. In contrast, for x ≥ 0.03, the system undergoes a non-magnetic phase transition at a temperature T 0 into a distinct nematic state that suppresses SFs. Such a drastic change of the spin fluctuation spectrum associated with nematicity by small doping is highly unusual, and provides insights into the origin and nature of nematicity in FeSCs.
  • Thumbnail Image
    Item
    X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
    (Washington, DC : American Chemical Society, 2011) Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.
    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.