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DDC: 540 × Subject: Nucleation ×

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Now showing 1 - 3 of 3
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    On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
    (Pennington, NJ : ECS, 2019) Kissinger, G.; Kot, D.; Costina, I.; Lisker, M.
    PECVD nitride layers with different layer stress ranging from about 315 MPa to −1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650°C for 4 h or 8 h followed annealing 780°C 3 h + 1000°C 16 h in nitrogen, the profiles of the oxide precipitate density were investigated. The binding states of hydrogen in the layers was investigated by FTIR. There is a clear effect of the layer stress on oxide precipitate nucleation. The higher the compressive layer stress is the higher is a BMD peak below the front surface. If the nitride layer is removed after the nucleation anneal the BMD peak below the front surface becomes lower. It is possible to model the BMD peak below the surface by vacancy in-diffusion from the silicon/nitride interface. With increasing duration of the nucleation anneal the vacancy injection from the silicon/nitride interface decreases and with increasing compressive layer stress it increases. © The Author(s) 2019.
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    Effect of Molar Mass on Critical Specific Work of Flow for Shear-Induced Crystal Nucleation in Poly (l-Lactic Acid)
    (Basel : MDPI, 2021) Du, Mengxue; Jariyavidyanont, Katalee; Kühnert, Ines; Boldt, Regine; Androsch, René
    The concept of specific work of flow has been applied for the analysis of critical shearing conditions for the formation of crystal nuclei in poly (l-lactic acid) (PLLA). Systematic variation in both time and rate of shearing the melt in a parallel-plate rheometer revealed that these parameters are interconvertible regarding the shear-induced formation of crystal nuclei; that is, low shear rate can be compensated for by increasing the shear time and vice versa. This result supports the view that critical shearing conditions can be expressed by a single quantity, providing additional options for tailoring polymer processing routes when enhanced nuclei formation is desired/unwanted. Analysis of PLLA of different mass-average molar masses of 70, 90, 120, and 576 kDa confirmed improved shear-induced crystal nucleation for materials of higher molar mass, with critical specific works of flow, above which shear-induced nuclei formation occurs, of 550, 60, 25, and 5 kPa, respectively.
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    On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon
    (Pennington, NJ : ECS, 2019) Kissinger, G.; Kot, D.; Lisker, M.; Sattler, A.
    PECVD oxide layers with different layer stress ranging from about −305.2 MPa to 39.9 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of rapid thermal annealing (RTA) and furnace annealing 780°C 3 h + 1000°C 16 h in nitrogen the profiles of the oxide precipitate density were investigated. Supersaturations of self-interstitials as function of layer stress were determined by adjusting modelling results to measured depth profiles of bulk microdefects. The self-interstitial supersaturation generated by RTA at 1250°C and 1175°C at the silicon/oxide interface is increasing linearly with increasing layer stress. Values for self-interstitial supersaturation determined on deposited oxide layers after RTA at 1250°C and 1175°C are very similar to values published for RTO by Sudo et al. An RTA at 1175°C with a PECVD oxide on top of the wafer is a method to effectively suppress oxygen precipitation in silicon wafers. Nucleation anneals carried out at 650°C for 4 h and 8 h did not show any effect of PECVD oxide layers on oxide precipitate nucleation. © The Author(s) 2019.