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Has files: Yes × Version: publishedVersion × Publisher: New York, NY [u.a.] : Springer × Subject: Nanostructures ×

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    Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
    (New York, NY [u.a.] : Springer, 2012) Picco, A.; Bonera, E.; Pezzoli, F.; Grilli, E.; Schmidt, O.G.; Isa, F.; Cecchi, S.; Guzzi, M.
    In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
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    Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
    (New York, NY [u.a.] : Springer, 2011) Harazim, S.M.; Feng, P.; Sanchez, S.; Deneke, C.; Mei, Y.; Schmidt, O.G.
    Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.