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Type: Article × Subject: Magnesium compounds ×

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Now showing 1 - 4 of 4
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    High-quality MgB2 nanocrystals synthesized by using modified amorphous nano-boron powders: Study of defect structures and superconductivity properties
    (College Park, MD : American Institute of Physics, 2019) Bateni, A.; Erdem, E.; Häßler, W.; Somer, M.
    Nano sized magnesium diboride (MgB2) samples were synthesized using various high-quality nano-B precursor powders. The microscopic defect structures of MgB2 samples were systematically investigated using X-ray powder diffraction, Raman, resistivity measurements and electron paramagnetic resonance spectroscopy. A significant deviation in the critical temperature Tc was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra. Scanning electron microscopy analysis demonstrate uniform and ultrafine morphology for the modified MgB2. Defect center in particular Mg vacancies influence the connectivity and the conductivity properties which are crucial for the superconductivity applications.
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    Shielding Effect on Flux Trapping in Pulsed-Field Magnetizing for Mg-B Bulk Magnet
    (Bristol : IOP Publ., 2021) Oka, T.; Yamanaka, K.; Sudo, K.; Dadiel, L.; Ogawa, J.; Yokoyama, K.; Häßler, W.; Noudem, J.; Berger, K.; Sakai, N.; Miryala, M.; Murakami, M.
    MgB2 superconducting bulk materials are characterized as simple and uniform metallic compounds, and capable of trapping field of non-distorted conical shapes. Although pulsed-field magnetization technique (PFM) is expected to be a cheap and an easy way to activate them, the heat generation due to the magnetic flux motion causes serious degradation of captured fields. The authors precisely estimated the flux trapping property of the bulk samples, found that the flux-shielding effect closely attributed to the sample dimensions. The magnetic field capturing of Ti-5.0wt% sample reached the highest value of 0.76 T. The applied field which reached the centre of the sample surface shifted from 1.0 T to 1.2 T with increasing sample thickness from 3.67 mm to 5.80 mm. This means that the shielding effect was enhanced with increasing the sample thickness. Moreover, Ti-addition affected the frequency of flux jump happenings. The occurrence of flux jumps was suppressed in 5.0wt%Ti-added sample. This means that the heat capacity of the compounds was promoted by Ti addition.
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    Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
    (Melville, NY : American Inst. of Physics, 2016) Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg
    Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.
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    Direct Observation of Shock-Induced Disordering of Enstatite Below the Melting Temperature
    (Hoboken, NJ [u.a.] : Wiley, 2020) Hernandez, J.-A.; Morard, G.; Guarguaglini, M.; Alonso-Mori, R.; Benuzzi-Mounaix, A.; Bolis, R.; Fiquet, G.; Galtier, E.; Gleason, A.E.; Glenzer, S.; Guyot, F.; Ko, B.; Lee, H.J.; Mao, W.L.; Nagler, B.; Ozaki, N.; Schuster, A.K.; Shim, S.H.; Vinci, T.; Ravasio, A.
    We report in situ structural measurements of shock-compressed single crystal orthoenstatite up to 337 ± 55 GPa on the Hugoniot, obtained by coupling ultrafast X-ray diffraction to laser-driven shock compression. Shock compression induces a disordering of the crystalline structure evidenced by the appearance of a diffuse X-ray diffraction signal at nanosecond timescales at 80 ± 13 GPa on the Hugoniot, well below the equilibrium melting pressure (>170 GPa). The formation of bridgmanite and post-perovskite have been indirectly reported in microsecond-scale plate-impact experiments. Therefore, we interpret the high-pressure disordered state we observed at nanosecond scale as an intermediate structure from which bridgmanite and post-perovskite crystallize at longer timescales. This evidence of a disordered structure of MgSiO3 on the Hugoniot indicates that the degree of polymerization of silicates is a key parameter to constrain the actual thermodynamics of shocks in natural environments. © 2020. The Authors.