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    Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Koprucki, Thomas; Wilms, Alexander; Knorr, Andreas; Bandelow, Uwe
    We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20
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    Towards doping optimization of semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Peschka, Dirk; Rotundo, Nella; Thomas, Marita
    We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum-well lasers. Then, we state a numerical discretization, for which we study optimized solutions for different regularizations and for vanishing weights.