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    The boson peak and the first sharp diffraction peak in (As2S3)x(GeS2)1–x glasses
    (Kyiv : Inst. of Semiconductor Physics, 2021) Stronski, A.V.; Kavetskyy, T.S.; Revutska, L.O.; Kaban, I.; Jóvári, P.; Shportko, K.V.; Sergienko, V.P.; Popovych, M.V.
    The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As2S3)x(GeS2)1x glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge–Ge, Ge–As and As–As make the largest contribution to FSDP, where the Ge–Ge and Ge–As pairs are dominant.