2017, Brzeski, P., Wojewoda, J., Kapitaniak, T., Kurths, J., Perlikowski, P.

In this paper we show the first broad experimental confirmation of the basin stability approach. The basin stability is one of the sample-based approach methods for analysis of the complex, multidimensional dynamical systems. We show that investigated method is a reliable tool for the analysis of dynamical systems and we prove that it has a significant advantages which make it appropriate for many applications in which classical analysis methods are difficult to apply. We study theoretically and experimentally the dynamics of a forced double pendulum. We examine the ranges of stability for nine different solutions of the system in a two parameter space, namely the amplitude and the frequency of excitation. We apply the path-following and the extended basin stability methods (Brzeski et al., Meccanica 51(11), 2016) and we verify obtained theoretical results in experimental investigations. Comparison of the presented results show that the sample-based approach offers comparable precision to the classical method of analysis. However, it is much simpler to apply and can be used despite the type of dynamical system and its dimensions. Moreover, the sample-based approach has some unique advantages and can be applied without the precise knowledge of parameter values.

2017, Ma, Dingyu, Rong, Xin, Zheng, Xiantong, Wang, Weiying, Wang, Ping, Schulz, Tobias, Albrecht, Martin, Metzner, Sebastian, Müller, Mathias, August, Olga, Bertram, Frank, Christen, Jürgen, Jin, Peng, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.